Electrical and optical properties of bismuth telluride/gallium nitride heterojunction diodes

M. Y. Pang, W. S. Li, K. H. Wong, C. Surya

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Semiconducting bismuth telluride has a band gap energy of about 0.15 eV at room temperature and is a good material for middle wavelength IR (MWIR) detection [S.K. Mishra, S. Satpathy, O. Jepsen, J. Phys. Condens. Matter, p. 461]. We have grown bismuth telluride thin films on gallium nitride (on sapphire) by pulsed laser deposition at a substrate temperature of 300 °C. The structural characteristics and surface morphology of the films were studied by X-ray diffraction and scanning electron microscopy, respectively. The chemical composition of the as-deposited bismuth telluride thin films was determined by X-ray photoelectron spectroscopy and was found to be different from that of the bulk target, changing from stoichiometric Bi2Te3 to bismuth rich. A bismuth rich p-Bi2Te3/n-GaN/Al2O3 heterojunction was fabricated for photovoltaic detection of low energy photons. The wide band gap semiconducting n-GaN layer and the Al2O3 substrate act as a window for IR transmission. A sensitive IR photoresponse of the heterojunction is obtained by back-side illumination. The photocurrent measured is 0.18 μA according to the irradiation change in the current-voltage characteristics. The current-voltage characteristics allow us to evaluate the series resistance (Rs), zero-bias resistance (R0) and ideality factors (n) of the junctions. Our results have suggested that bismuth telluride is a potential candidate for photovoltaic mid-infrared detection.

Original languageEnglish
Pages (from-to)4238-4241
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume354
Issue number35-39
DOIs
Publication statusPublished - Oct 1 2008
Externally publishedYes

Fingerprint

bismuth tellurides
Gallium nitride
gallium nitrides
Bismuth
Heterojunctions
heterojunctions
Diodes
Electric properties
Optical properties
diodes
electrical properties
optical properties
Current voltage characteristics
bismuth
Energy gap
Thin films
Infrared transmission
Aluminum Oxide
electric potential
Substrates

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Electrical and optical properties of bismuth telluride/gallium nitride heterojunction diodes. / Pang, M. Y.; Li, W. S.; Wong, K. H.; Surya, C.

In: Journal of Non-Crystalline Solids, Vol. 354, No. 35-39, 01.10.2008, p. 4238-4241.

Research output: Contribution to journalArticle

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