Electrical and optical properties of TiN thin films

M. N. Solovan, V. V. Brus, E. V. Maistruk, P. D. Maryanchuk

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)

Abstract

TiN thin films have been grown by reactive magnetron sputtering. It has been shown that an Ohmic contact to TiN thin-film can be made from indium. The TiN thin films have been shown to be n-type semiconductors with a carrier concentration of 2.88 × 1022 cm-3 and resistivity of ρ = 0.4 Ω cm at room temperature. The activation energy for conduction in the TiN films at temperatures in the range 295 K < T < 420 K is 0.15 eV. The optical properties of the TiN thin films have been investigated. The material of the TiN thin films has been shown to be a direct gap semiconductor with a band gap E g = 3.4 eV.

Original languageEnglish
Pages (from-to)40-45
Number of pages6
JournalInorganic Materials
Volume50
Issue number1
DOIs
Publication statusPublished - Jan 2014
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Inorganic Chemistry
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Electrical and optical properties of TiN thin films'. Together they form a unique fingerprint.

Cite this