Electrical and photoelectric properties of anisotype n-TiN/p-Si heterojunctions

M. M. Solovan, V. V. Brus, P. D. Maryanchuk

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Photosensitive n-TiN/p-Si heterojunctions are fabricated by the reactive magnetron sputtering of a thin titanium-nitride film with n-type conductivity onto polished polycrystalline p-Si wafers. The I-V characteristics of the heterostructures are measured at different temperatures. The temperature dependences of the potential-barrier height and series resistance of the n-TiN/p-Si heterojunction are studied. The dominant mechanisms of current transport through the heterojunction in the cases of forward and reverse bias are established. The heterostructures generate the open-circuit voltage V oc = 0.4 V and the short-circuit current I sc = 1.36 mA/cm2 under illumination with a power density of 80 mW/cm2.

Original languageEnglish
Pages (from-to)1174-1179
Number of pages6
JournalSemiconductors
Volume47
Issue number9
DOIs
Publication statusPublished - Sep 2013
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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