Electrical and photoelectric properties of n-TiN/p-Hg3In2Te6 heterostructures

M. N. Solovan; A. I. Mostovyi; V. V. Brus; E. V. Maistruk; P. D. Maryanchuk

doi:10.1134/S1063782616080236

Electrical and photoelectric properties of n-TiN/p-Hg₃In₂Te₆ heterostructures

M. N. Solovan, A. I. Mostovyi, V. V. Brus, E. V. Maistruk, P. D. Maryanchuk

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

n-TiN/p-Hg₃In₂Te₆ heterostructures are fabricated by depositing a thin n-type titanium nitride (TiN) film onto prepared p-type Hg₃In₂Te₆ plates using reactive magnetron sputtering. Their electrical and photoelectric properties are studied. Dominant charge-transport mechanisms under forward bias are analyzed within tunneling-recombination and tunneling models. The fabricated n-TiN/p-Hg₃In₂Te₆ structures have the following photoelectric parameters at an illumination intensity of 80 mW/cm²: the open-circuit voltage is V_OC = 0.52 V, the short-circuit current is I_SC = 0.265 mA/cm², and the fill factor is FF = 0.39.

Original language	English
Pages (from-to)	1020-1024
Number of pages	5
Journal	Semiconductors
Volume	50
Issue number	8
DOIs	https://doi.org/10.1134/S1063782616080236
Publication status	Published - Aug 1 2016
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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abstract = "n-TiN/p-Hg3In2Te6 heterostructures are fabricated by depositing a thin n-type titanium nitride (TiN) film onto prepared p-type Hg3In2Te6 plates using reactive magnetron sputtering. Their electrical and photoelectric properties are studied. Dominant charge-transport mechanisms under forward bias are analyzed within tunneling-recombination and tunneling models. The fabricated n-TiN/p-Hg3In2Te6 structures have the following photoelectric parameters at an illumination intensity of 80 mW/cm2: the open-circuit voltage is VOC = 0.52 V, the short-circuit current is ISC = 0.265 mA/cm2, and the fill factor is FF = 0.39.",

author = "Solovan, {M. N.} and Mostovyi, {A. I.} and Brus, {V. V.} and Maistruk, {E. V.} and Maryanchuk, {P. D.}",

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AU - Solovan, M. N.

AU - Mostovyi, A. I.

AU - Brus, V. V.

AU - Maistruk, E. V.

AU - Maryanchuk, P. D.

PY - 2016/8/1

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AB - n-TiN/p-Hg3In2Te6 heterostructures are fabricated by depositing a thin n-type titanium nitride (TiN) film onto prepared p-type Hg3In2Te6 plates using reactive magnetron sputtering. Their electrical and photoelectric properties are studied. Dominant charge-transport mechanisms under forward bias are analyzed within tunneling-recombination and tunneling models. The fabricated n-TiN/p-Hg3In2Te6 structures have the following photoelectric parameters at an illumination intensity of 80 mW/cm2: the open-circuit voltage is VOC = 0.52 V, the short-circuit current is ISC = 0.265 mA/cm2, and the fill factor is FF = 0.39.

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