Abstract
n-TiN/p-Hg3In2Te6 heterostructures are fabricated by depositing a thin n-type titanium nitride (TiN) film onto prepared p-type Hg3In2Te6 plates using reactive magnetron sputtering. Their electrical and photoelectric properties are studied. Dominant charge-transport mechanisms under forward bias are analyzed within tunneling-recombination and tunneling models. The fabricated n-TiN/p-Hg3In2Te6 structures have the following photoelectric parameters at an illumination intensity of 80 mW/cm2: the open-circuit voltage is VOC = 0.52 V, the short-circuit current is ISC = 0.265 mA/cm2, and the fill factor is FF = 0.39.
Original language | English |
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Pages (from-to) | 1020-1024 |
Number of pages | 5 |
Journal | Semiconductors |
Volume | 50 |
Issue number | 8 |
DOIs | |
Publication status | Published - Aug 1 2016 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics