Electrical and photoelectric properties of n-TiN/p-Hg3In2Te6 heterostructures

M. N. Solovan, A. I. Mostovyi, V. V. Brus, E. V. Maistruk, P. D. Maryanchuk

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

n-TiN/p-Hg3In2Te6 heterostructures are fabricated by depositing a thin n-type titanium nitride (TiN) film onto prepared p-type Hg3In2Te6 plates using reactive magnetron sputtering. Their electrical and photoelectric properties are studied. Dominant charge-transport mechanisms under forward bias are analyzed within tunneling-recombination and tunneling models. The fabricated n-TiN/p-Hg3In2Te6 structures have the following photoelectric parameters at an illumination intensity of 80 mW/cm2: the open-circuit voltage is VOC = 0.52 V, the short-circuit current is ISC = 0.265 mA/cm2, and the fill factor is FF = 0.39.

Original languageEnglish
Pages (from-to)1020-1024
Number of pages5
JournalSemiconductors
Volume50
Issue number8
DOIs
Publication statusPublished - Aug 1 2016
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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