The conditions for fabricating photosensitive TiN/p-InSe heterojunctions by the reactive-magnetron sputtering of thin titanium-nitride films onto freshly cleaved p-InSe single-crystal substrates is investigated. The presence of a tunnel-transparent high-resistivity In2Se3 layer at the heterojunction is revealed from analysis of the I–V characteristics, and the effect of this layer on the electrical properties and photosensitivity spectra of the heterostructures is analyzed. The dominant current transport mechanisms through the TiN/p-InSe energy barrier under forward and reverse bias are determined.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics