Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction

I. G. Orletsky, M. I. Ilashchuk, V. V. Brus, P. D. Marianchuk, M. M. Solovan, Z. D. Kovalyuk

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The conditions for fabricating photosensitive TiN/p-InSe heterojunctions by the reactive-magnetron sputtering of thin titanium-nitride films onto freshly cleaved p-InSe single-crystal substrates is investigated. The presence of a tunnel-transparent high-resistivity In2Se3 layer at the heterojunction is revealed from analysis of the I–V characteristics, and the effect of this layer on the electrical properties and photosensitivity spectra of the heterostructures is analyzed. The dominant current transport mechanisms through the TiN/p-InSe energy barrier under forward and reverse bias are determined.

Original languageEnglish
Pages (from-to)334-338
Number of pages5
Issue number3
Publication statusPublished - Mar 1 2016
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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