Photosensitive heterojunctions n-TiO2/p-CdTe were fabricated by dc reactive magnetron deposition of TiO2 thin films with n-type conductivity onto freshly cleaved p-CdTe single-crystal substrates (1 1 0). Their electrical properties were investigated and the dominating current mechanisms were analyzed at forward and reverse biases in the scope of the tunnel-recombination and emission-recombination models. The obtained surface-barrier structures n-TiO2/p-CdTe possessed the following photoelectrical parameters under 100 mW cm-2 illumination: the open-circuit voltage Voc = 0.69 V, the short-circuit current I sc = 6 mA cm-2 and the fill factor FF = 0.42.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry