Electrical and photoelectrical properties of photosensitive heterojunctions n-TiO2/p-CdTe

V. V. Brus, M. I. Ilashchuk, Z. D. Kovalyuk, P. D. Maryanchuk, K. S. Ulyanytsky

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47 Citations (Scopus)


Photosensitive heterojunctions n-TiO2/p-CdTe were fabricated by dc reactive magnetron deposition of TiO2 thin films with n-type conductivity onto freshly cleaved p-CdTe single-crystal substrates (1 1 0). Their electrical properties were investigated and the dominating current mechanisms were analyzed at forward and reverse biases in the scope of the tunnel-recombination and emission-recombination models. The obtained surface-barrier structures n-TiO2/p-CdTe possessed the following photoelectrical parameters under 100 mW cm-2 illumination: the open-circuit voltage Voc = 0.69 V, the short-circuit current I sc = 6 mA cm-2 and the fill factor FF = 0.42.

Original languageEnglish
Article number125006
JournalSemiconductor Science and Technology
Issue number12
Publication statusPublished - Dec 2011
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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