Electrical and structural studies of laser-debonded GaN light emitting diodes

K. K. Leung, C. P. Chan, T. M. Yue, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. Transmission electron microscopy is employed to characterize the laser affected zone of the debonded LEDs. The findings from TEM studies are in good agreement with our thermal analysis predictions. The as-debonded surface is then roughened by photo-electro chemical (PEC) wet etching to form nano-scaled hexagonal pyramid structures and this morphology is found to be useful for light extraction on LEDs.

Original languageEnglish
Title of host publicationCOMMAD'06 - Proceedings of the 2006 Conference on Optoelectronic and Microelectronic Materials and Devices
Pages98-100
Number of pages3
DOIs
Publication statusPublished - Dec 1 2006
Externally publishedYes
Event2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006 - Perth, Australia
Duration: Dec 6 2006Dec 8 2006

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference2006 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2006
CountryAustralia
CityPerth
Period12/6/0612/8/06

Keywords

  • GaN
  • Laser liftoff
  • LED
  • MOCVD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Electrical and structural studies of laser-debonded GaN light emitting diodes'. Together they form a unique fingerprint.

Cite this