Ohmio contacts based on Ir/Au and Pd/Ir/Au metallisations have been formed on highly doped p-type InGaAs. Their electrical characteristics were measured and compared with those of conventional Ti/Pt/Au ohmic contacts. They were found to have ohmic contact resistance as low as Ti/Pt/Au metallisation but with superior thermal stabilities.
ASJC Scopus subject areas
- Electrical and Electronic Engineering