Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects

Askar Syrlybekov, Han Chun Wu, Ozhet Mauit, Ye Cun Wu, Pierce Maguire, Abbas Khalid, Cormac Ó Coileaín, Leo Farrell, Cheng Lin Heng, Mohamed Abid, Huajun Liu, Li Yang, Hong Zhou Zhang, Igor V. Shvets

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Recently, significant attention has been paid to the resistance switching (RS) behaviour in Fe3O4 and it was explained through the analogy of the electrically driven metal-insulator transition based on the quantum tunneling theory. Here, we propose a method to experimentally support this explanation and provide a way to tune the critical switching parameter by introducing self-aligned localized impurities through the growth of Fe3O4 thin films on stepped Sr. iO3 substrates. Anisotropic behavior in the RS was observed, where a lower switching voltage in the range of 104 V cm-1 is required to switch Fe3O4 from a high conducting state to a low conducting state when the electrical field is applied along the steps. The anisotropic RS behavior is attributed to a high density array of anti-phase boundaries (APBs) formed at the step edges and thus are aligned along the same direction in the film which act as a train of hotspot forming conduits for resonant tunneling. Our experimental studies open an interesting window to tune the electrical-field-driven metal-insulator transition in strongly correlated systems.

Original languageEnglish
Pages (from-to)14055-14061
Number of pages7
JournalNanoscale
Volume7
Issue number33
DOIs
Publication statusPublished - Sep 7 2015

Fingerprint

Metal insulator transition
Defects
Resonant tunneling
Phase boundaries
Switches
Impurities
Thin films
Electric potential
Substrates

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Syrlybekov, A., Wu, H. C., Mauit, O., Wu, Y. C., Maguire, P., Khalid, A., ... Shvets, I. V. (2015). Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects. Nanoscale, 7(33), 14055-14061. https://doi.org/10.1039/c5nr03251b

Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects. / Syrlybekov, Askar; Wu, Han Chun; Mauit, Ozhet; Wu, Ye Cun; Maguire, Pierce; Khalid, Abbas; Ó Coileaín, Cormac; Farrell, Leo; Heng, Cheng Lin; Abid, Mohamed; Liu, Huajun; Yang, Li; Zhang, Hong Zhou; Shvets, Igor V.

In: Nanoscale, Vol. 7, No. 33, 07.09.2015, p. 14055-14061.

Research output: Contribution to journalArticle

Syrlybekov, A, Wu, HC, Mauit, O, Wu, YC, Maguire, P, Khalid, A, Ó Coileaín, C, Farrell, L, Heng, CL, Abid, M, Liu, H, Yang, L, Zhang, HZ & Shvets, IV 2015, 'Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects', Nanoscale, vol. 7, no. 33, pp. 14055-14061. https://doi.org/10.1039/c5nr03251b
Syrlybekov, Askar ; Wu, Han Chun ; Mauit, Ozhet ; Wu, Ye Cun ; Maguire, Pierce ; Khalid, Abbas ; Ó Coileaín, Cormac ; Farrell, Leo ; Heng, Cheng Lin ; Abid, Mohamed ; Liu, Huajun ; Yang, Li ; Zhang, Hong Zhou ; Shvets, Igor V. / Electrical-field-driven metal-insulator transition tuned with self-aligned atomic defects. In: Nanoscale. 2015 ; Vol. 7, No. 33. pp. 14055-14061.
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