Electrical properties of an n-TiO2/n-GaP semiconductor heterostructure

V. V. Brus, Z. D. Kovalyuk, P. D. Mar'yanchuk

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)233-235
Number of pages3
JournalRussian Physics Journal
Volume56
Issue number2
DOIs
Publication statusPublished - Jul 2013
Externally publishedYes

Keywords

  • gallium phosphide
  • heterostructure
  • titanium dioxide

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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