Electrical properties of anisotype heterojunctions n-CdZnO/p-CdTe

V. V. Brus, M. I. Ilashchuk, V. V. Khomyak, Z. D. Kovalyuk, P. D. Maryanchuk, K. S. Ulyanytsky

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Anisotype surface-barrier n-Cd 0.5Zn 0.5O/p-CdTe heterojunctions are fabricated by the high-frequency sputtering of a Cd 0.5Zn 0.5O alloy film onto a freshly cleaved single-crystal CdTe surface. The main electrical properties of the heterojunctions are studied and the dominant mechanisms of charge transport are established, namely, the multistage tunnel-recombination mechanism under forward bias, Frenkel-Pool emission, and tunneling under forward bias. The influence of the surface electrically active states at the heterojunction interface is analyzed and their surface concentration is evaluated: N ss ~ 10 14 cm -2.

Original languageEnglish
Pages (from-to)1152-1157
Number of pages6
JournalSemiconductors
Volume46
Issue number9
DOIs
Publication statusPublished - Sep 2012
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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