Electrical properties of anisotype n-CdO/p-Si heterojunctions

M. N. Solovan, V. V. Brus, P. D. Maryanchuk

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

An n-CdO/p-Si heterojunction is fabricated by the deposition of a thin cadmium-oxide film with n-type conductivity onto a polished polycrystalline p-Si wafer by the spray-pyrolysis technique. The I-V characteristics of the heterostructure are measured at different temperatures. It is established that the current through the investigated heterostructure at the forward bias 3kT/e < V < 0.5 V is formed by tunneling-recombination processes with the participation of surface states at the CdO/Si interface and at V > 0.5 V, by tunneling through the space-charge region. The dominant mechanisms of current transport at reverse bias are the Frenkel-Pull emission and tunneling with the participation of energy levels formed by surface states.

Original languageEnglish
Pages (from-to)899-904
Number of pages6
JournalSemiconductors
Volume48
Issue number7
DOIs
Publication statusPublished - Jul 2014
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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