Electrical properties of anisotype n-TiN/p-Hg3In2Te6 heterojunctions

M. M. Solovan, E. V. Maistruk, V. V. Brus, P. D. Maryanchuk

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Photosensitive anisotype n-TiN/p-Hg3In2Te6 heterojunctions have been obtained by reactive magnetron sputtering of thin n-type titanium nitride (TiN) films onto single-crystalline plates of p-type Hg3In2Te6. It is established that the obtained heterostructures generate an open-circuit voltage of V oc = 0.52 V and a short-circuit current density of I sc = 0.265 mA/cm2 with a filling factor of FF = 0.39 under illumination at a power density of 80 mW/cm2.

Original languageEnglish
Pages (from-to)231-233
Number of pages3
JournalTechnical Physics Letters
Issue number3
Publication statusPublished - Mar 2014
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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