Electrical properties of high quality MBE-grown GaN thin films on intermediate-temperature buffer layers

W. K. Fong, C. F. Zhu, B. H. Leung, C. F. Zhu, C. Surya

Research output: Contribution to conferencePaper

Abstract

High quality GaN thin films were grown by rf-plasma assisted molecular beam epitaxy on intermediate-temperature buffer layer (ITBL). The electrical properties of the GaN films were systematically characterized by Hall coefficients and low-frequency noise measurements. The results show a systematic change in the electrical properties, which vary as a function of the thickness of ITBL. Room temperature Hall mobility increases steadily from 87 cm2V-1s-1, for GaN film grown on conventional low-temperature buffer layer (LTBL), to 390 cm2V-1s-1, for sample grown with an 800-nm-thick ITBL inserted between the LTBL and the top epitaxial layer. The Hooge parameter reaches a minimum value of 7.34×10-2 for an optimal ITBL thickness of 800nm. The observed improvements in the electrical properties are attributed to the relaxation of residual strain in the overgrown GaN by utilizing an ITBL.

Original languageEnglish
Pages153-157
Number of pages5
Publication statusPublished - Jan 1 2001
Externally publishedYes
Event2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China
Duration: Jun 30 2001 → …

Conference

Conference2001 IEEE Hong Kong Electron Devices Meeting
CountryChina
CityHong Kong
Period6/30/01 → …

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Electrical properties of high quality MBE-grown GaN thin films on intermediate-temperature buffer layers'. Together they form a unique fingerprint.

  • Cite this

    Fong, W. K., Zhu, C. F., Leung, B. H., Zhu, C. F., & Surya, C. (2001). Electrical properties of high quality MBE-grown GaN thin films on intermediate-temperature buffer layers. 153-157. Paper presented at 2001 IEEE Hong Kong Electron Devices Meeting, Hong Kong, China.