Electrical properties of MOS diodes In/TiO2/p-CdTe

V. V. Brus; M. I. Ilashchuk; I. G. Orletsky; P. D. Maryanchuk; K. S. Ulyanytskiy

doi:10.1134/S1063782614040071

Electrical properties of MOS diodes In/TiO₂/p-CdTe

V. V. Brus, M. I. Ilashchuk, I. G. Orletsky, P. D. Maryanchuk, K. S. Ulyanytskiy

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In/TiO₂/p-CdTe MOS diodes, which have a rectification coefficient of K = 6 × 10³ at an external bias of 2 V, are fabricated for the first time by means of the inexpensive spray-pyrolysis method. It is established that tunnel-recombination processes in the MOS structures under investigation for forward and reverse voltages with the participation of levels at an energy depth of 0.25 eV are the dominant current-flow mechanism. The features of the voltage-capacitance characteristics of In/TiO₂/p-CdTe MOS diodes testify to a sharp decrease in the resistance of the TiO₂ high-resistance layer at forward bias, which is caused by the relation between the energy parameters of components of the MOS structure under investigation.

Original language	English
Pages (from-to)	487-491
Number of pages	5
Journal	Semiconductors
Volume	48
Issue number	4
DOIs	https://doi.org/10.1134/S1063782614040071
Publication status	Published - Apr 2014
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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@article{6e935852fa9147779f3f55f50297d7f6,

title = "Electrical properties of MOS diodes In/TiO2/p-CdTe",

abstract = "In/TiO2/p-CdTe MOS diodes, which have a rectification coefficient of K = 6 × 103 at an external bias of 2 V, are fabricated for the first time by means of the inexpensive spray-pyrolysis method. It is established that tunnel-recombination processes in the MOS structures under investigation for forward and reverse voltages with the participation of levels at an energy depth of 0.25 eV are the dominant current-flow mechanism. The features of the voltage-capacitance characteristics of In/TiO2/p-CdTe MOS diodes testify to a sharp decrease in the resistance of the TiO2 high-resistance layer at forward bias, which is caused by the relation between the energy parameters of components of the MOS structure under investigation.",

author = "Brus, {V. V.} and Ilashchuk, {M. I.} and Orletsky, {I. G.} and Maryanchuk, {P. D.} and Ulyanytskiy, {K. S.}",

year = "2014",

month = apr,

doi = "10.1134/S1063782614040071",

language = "English",

volume = "48",

pages = "487--491",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "4",

}

TY - JOUR

T1 - Electrical properties of MOS diodes In/TiO2/p-CdTe

AU - Brus, V. V.

AU - Ilashchuk, M. I.

AU - Orletsky, I. G.

AU - Maryanchuk, P. D.

AU - Ulyanytskiy, K. S.

PY - 2014/4

Y1 - 2014/4

N2 - In/TiO2/p-CdTe MOS diodes, which have a rectification coefficient of K = 6 × 103 at an external bias of 2 V, are fabricated for the first time by means of the inexpensive spray-pyrolysis method. It is established that tunnel-recombination processes in the MOS structures under investigation for forward and reverse voltages with the participation of levels at an energy depth of 0.25 eV are the dominant current-flow mechanism. The features of the voltage-capacitance characteristics of In/TiO2/p-CdTe MOS diodes testify to a sharp decrease in the resistance of the TiO2 high-resistance layer at forward bias, which is caused by the relation between the energy parameters of components of the MOS structure under investigation.

AB - In/TiO2/p-CdTe MOS diodes, which have a rectification coefficient of K = 6 × 103 at an external bias of 2 V, are fabricated for the first time by means of the inexpensive spray-pyrolysis method. It is established that tunnel-recombination processes in the MOS structures under investigation for forward and reverse voltages with the participation of levels at an energy depth of 0.25 eV are the dominant current-flow mechanism. The features of the voltage-capacitance characteristics of In/TiO2/p-CdTe MOS diodes testify to a sharp decrease in the resistance of the TiO2 high-resistance layer at forward bias, which is caused by the relation between the energy parameters of components of the MOS structure under investigation.

UR - http://www.scopus.com/inward/record.url?scp=84898955903&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898955903&partnerID=8YFLogxK

U2 - 10.1134/S1063782614040071

DO - 10.1134/S1063782614040071

M3 - Article

AN - SCOPUS:84898955903

VL - 48

SP - 487

EP - 491

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 4

ER -