Electrical properties of MOS diodes In/TiO2/p-CdTe

V. V. Brus, M. I. Ilashchuk, I. G. Orletsky, P. D. Maryanchuk, K. S. Ulyanytskiy

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

In/TiO2/p-CdTe MOS diodes, which have a rectification coefficient of K = 6 × 103 at an external bias of 2 V, are fabricated for the first time by means of the inexpensive spray-pyrolysis method. It is established that tunnel-recombination processes in the MOS structures under investigation for forward and reverse voltages with the participation of levels at an energy depth of 0.25 eV are the dominant current-flow mechanism. The features of the voltage-capacitance characteristics of In/TiO2/p-CdTe MOS diodes testify to a sharp decrease in the resistance of the TiO2 high-resistance layer at forward bias, which is caused by the relation between the energy parameters of components of the MOS structure under investigation.

Original languageEnglish
Pages (from-to)487-491
Number of pages5
JournalSemiconductors
Volume48
Issue number4
DOIs
Publication statusPublished - Apr 2014
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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