Electrical properties of photosensitive heterojunctions n-TiN/p-CdTe

M. N. Solovan, V. V. Brus, P. D. Maryanchuk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photosensitive heterojunctions n-TiN/p-CdTe were obtained for the first time. The dominating mechanism of current transport through the heterojunctions was determined under forward biases. The heterojunctions produce open circuit voltage Voc = 0,35 V, short circuit current Isc = 1,88 mA/cm2 and fill factor FF = 0,51 at illumination 80 mW/cm 2.

Original languageEnglish
Title of host publicationCriMiCo 2013 - 2013 23rd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
Pages782-783
Number of pages2
Publication statusPublished - 2013
Externally publishedYes
Event2013 23rd International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2013 - Sevastopol, Crimea, Ukraine
Duration: Sep 8 2013Sep 14 2013

Publication series

NameCriMiCo 2013 - 2013 23rd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings

Conference

Conference2013 23rd International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2013
CountryUkraine
CitySevastopol, Crimea
Period9/8/139/14/13

ASJC Scopus subject areas

  • Computer Networks and Communications

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