Electrical properties of thin-film semiconductor heterojunctions n-TiO2/p-CuInS2

V. V. Brus, I. G. Orletsky, M. I. Ilashchuk, P. D. Maryanchuk

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Anisotype thin-film heterojunctions n-TiO2/p-CuInS2 are fabricated by spray-pyrolysis and dc reactive magnetron sputtering. The electrical and optical properties of thin CuInS2 films deposited by spraypyrolysis in strictly controlled modes are examined. Also, the electrical properties of the Mo/CuInS2 rear contact are studied by means of measurements by the three-probe method. The dominant charge transport mechanism in forward- and reverse-biased thin-film heterojunctions n-TiO2/p-CuInS2 is determined. This mechanism is well interpreted in terms of the tunneling–recombination model via surface states at the heterointerface and defects in the space-charge region.

Original languageEnglish
Pages (from-to)1046-1050
Number of pages5
JournalSemiconductors
Volume48
Issue number8
DOIs
Publication statusPublished - Jan 1 2014
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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