Electrodeposition of CU2ZnSnS4 thin films using ionic liquids

C. P. Chan; H. Lam; K. Y. Wong; C. Surya

Electrodeposition of CU₂ZnSnS₄ thin films using ionic liquids

C. P. Chan, H. Lam, K. Y. Wong, C. Surya

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report the growth of Cu₂ZnSnS₄ (CZTS) thin films by electrodeposition in ionic liquid. Sulfurization was performed in elementary sulfur vapor environment at 450°C for 2 hours. The X-ray diffraction analysis indicated that the film has a stannite structure with preferred grain orientation along (112). Photo-absorption measurement of the sample was performed from 500 nm to 990 nm. It is found that the energy bandgap of the film is about 1.49eV and the absorption coefficient is found to be of the order of 10⁴cm^-1.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings - Photovoltaic Materials and Manufacturing Issues
Pages	105-109
Number of pages	5
Volume	1123
Publication status	Published - Dec 1 2009
Externally published	Yes
Event	2008 MRS Fall Meeting - Boston, MA, United States Duration: Dec 2 2008 → Dec 4 2008

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1123
ISSN (Print)	0272-9172

Conference

Conference	2008 MRS Fall Meeting
Country	United States
City	Boston, MA
Period	12/2/08 → 12/4/08

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Electrodeposition of CU₂ZnSnS₄ thin films using ionic liquids. / Chan, C. P.; Lam, H.; Wong, K. Y.; Surya, C.

Materials Research Society Symposium Proceedings - Photovoltaic Materials and Manufacturing Issues. Vol. 1123 2009. p. 105-109 (Materials Research Society Symposium Proceedings; Vol. 1123).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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abstract = "We report the growth of Cu2ZnSnS4 (CZTS) thin films by electrodeposition in ionic liquid. Sulfurization was performed in elementary sulfur vapor environment at 450°C for 2 hours. The X-ray diffraction analysis indicated that the film has a stannite structure with preferred grain orientation along (112). Photo-absorption measurement of the sample was performed from 500 nm to 990 nm. It is found that the energy bandgap of the film is about 1.49eV and the absorption coefficient is found to be of the order of 104cm-1.",

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AU - Lam, H.

AU - Wong, K. Y.

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Y1 - 2009/12/1

N2 - We report the growth of Cu2ZnSnS4 (CZTS) thin films by electrodeposition in ionic liquid. Sulfurization was performed in elementary sulfur vapor environment at 450°C for 2 hours. The X-ray diffraction analysis indicated that the film has a stannite structure with preferred grain orientation along (112). Photo-absorption measurement of the sample was performed from 500 nm to 990 nm. It is found that the energy bandgap of the film is about 1.49eV and the absorption coefficient is found to be of the order of 104cm-1.

AB - We report the growth of Cu2ZnSnS4 (CZTS) thin films by electrodeposition in ionic liquid. Sulfurization was performed in elementary sulfur vapor environment at 450°C for 2 hours. The X-ray diffraction analysis indicated that the film has a stannite structure with preferred grain orientation along (112). Photo-absorption measurement of the sample was performed from 500 nm to 990 nm. It is found that the energy bandgap of the film is about 1.49eV and the absorption coefficient is found to be of the order of 104cm-1.

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BT - Materials Research Society Symposium Proceedings - Photovoltaic Materials and Manufacturing Issues

T2 - 2008 MRS Fall Meeting

Y2 - 2 December 2008 through 4 December 2008

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