Elevated-temperature annealing effects on AlGaN/GaN heterostructures

Benedict Ofuonye, Jaesun Lee, Minjun Yan, Qhalid Fareed, Iftikhar Ahmad, Asif Khan, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The effect of high-temperature annealing of undoped AlGaN/GaN heterostructures on different substrates was systematically studied between 1100°C and 1230°C. An AlN spacer layer was found to add stability to structures on sapphire substrates. AlGaN/GaN heterostructures on SiC substrates demonstrated excellent robustness for the temperature range studied, maintaining their mobility, sheet resistance, and sheet concentration values, even after annealing. A silicon nitride, SiN x, capping layer was found to assist in minimizing surface roughness during annealing and maintaining the electrical characteristics of the heterostructures. AlGaN/GaN heterostructures on SiC substrates showed a 20% decrease in mobility for uncapped samples compared with SiN x -capped samples.

Original languageEnglish
Pages (from-to)2344-2347
Number of pages4
JournalJournal of Electronic Materials
Volume40
Issue number12
DOIs
Publication statusPublished - Dec 1 2011

Keywords

  • Temperature annealing
  • mobility
  • roughness
  • sheet resistance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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