Elevated-temperature annealing effects on AlGaN/GaN heterostructures

Benedict Ofuonye, Jaesun Lee, Minjun Yan, Qhalid Fareed, Iftikhar Ahmad, Asif Khan, Ilesanmi Adesida

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effect of high-temperature annealing of undoped AlGaN/GaN heterostructures on different substrates was systematically studied between 1100°C and 1230°C. An AlN spacer layer was found to add stability to structures on sapphire substrates. AlGaN/GaN heterostructures on SiC substrates demonstrated excellent robustness for the temperature range studied, maintaining their mobility, sheet resistance, and sheet concentration values, even after annealing. A silicon nitride, SiN x, capping layer was found to assist in minimizing surface roughness during annealing and maintaining the electrical characteristics of the heterostructures. AlGaN/GaN heterostructures on SiC substrates showed a 20% decrease in mobility for uncapped samples compared with SiN x -capped samples.

Original languageEnglish
Pages (from-to)2344-2347
Number of pages4
JournalJournal of Electronic Materials
Volume40
Issue number12
DOIs
Publication statusPublished - Dec 2011
Externally publishedYes

Fingerprint

Heterojunctions
Annealing
annealing
Substrates
Temperature
temperature
Aluminum Oxide
Sheet resistance
Silicon nitride
silicon nitrides
Sapphire
spacers
surface roughness
sapphire
Surface roughness
aluminum gallium nitride

Keywords

  • mobility
  • roughness
  • sheet resistance
  • Temperature annealing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Elevated-temperature annealing effects on AlGaN/GaN heterostructures. / Ofuonye, Benedict; Lee, Jaesun; Yan, Minjun; Fareed, Qhalid; Ahmad, Iftikhar; Khan, Asif; Adesida, Ilesanmi.

In: Journal of Electronic Materials, Vol. 40, No. 12, 12.2011, p. 2344-2347.

Research output: Contribution to journalArticle

Ofuonye, Benedict ; Lee, Jaesun ; Yan, Minjun ; Fareed, Qhalid ; Ahmad, Iftikhar ; Khan, Asif ; Adesida, Ilesanmi. / Elevated-temperature annealing effects on AlGaN/GaN heterostructures. In: Journal of Electronic Materials. 2011 ; Vol. 40, No. 12. pp. 2344-2347.
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AU - Adesida, Ilesanmi

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