Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor

Ahmad Khusro, Mohammad Hashmi, Abdul Qayyum Ansari

Research output: Contribution to conferencePaper

Original languageEnglish
Publication statusPublished - Aug 15 2018
Event2nd International Conference on Computing and Network Communications, CoCoNet 2018 - Astana, Kazakhstan
Duration: Aug 15 2018Aug 17 2018

Conference

Conference2nd International Conference on Computing and Network Communications, CoCoNet 2018
CountryKazakhstan
CityAstana
Period8/15/188/17/18

Cite this

Khusro, A., Hashmi, M., & Ansari, A. Q. (2018). Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor. Paper presented at 2nd International Conference on Computing and Network Communications, CoCoNet 2018, Astana, Kazakhstan.