Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor

Ahmad Khusro, Mohammad Hashmi, Abdul Qayyum Ansari

Research output: Contribution to conference › Paper

Original language	English
Publication status	Published - Aug 15 2018
Event	2nd International Conference on Computing and Network Communications, CoCoNet 2018 - Astana, Kazakhstan Duration: Aug 15 2018 → Aug 17 2018

Conference	2nd International Conference on Computing and Network Communications, CoCoNet 2018
Country	Kazakhstan
City	Astana
Period	8/15/18 → 8/17/18

Khusro, A., Hashmi, M., & Ansari, A. Q. (2018). Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor. Paper presented at 2nd International Conference on Computing and Network Communications, CoCoNet 2018, Astana, Kazakhstan.

2018. Paper presented at 2nd International Conference on Computing and Network Communications, CoCoNet 2018, Astana, Kazakhstan.

Research output: Contribution to conference › Paper

Khusro, A, Hashmi, M & Ansari, AQ 2018, 'Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor' Paper presented at 2nd International Conference on Computing and Network Communications, CoCoNet 2018, Astana, Kazakhstan, 8/15/18 - 8/17/18, .

Khusro A, Hashmi M, Ansari AQ. Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor. 2018. Paper presented at 2nd International Conference on Computing and Network Communications, CoCoNet 2018, Astana, Kazakhstan.

Khusro, Ahmad ; Hashmi, Mohammad ; Ansari, Abdul Qayyum. / Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor. Paper presented at 2nd International Conference on Computing and Network Communications, CoCoNet 2018, Astana, Kazakhstan.

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