Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor

Ahmad Khusro, Mohammad Hashmi, Abdul Qayyum Ansari

Research output: Contribution to conference › Paper

Original language	English
Publication status	Published - Aug 15 2018
Event	2nd International Conference on Computing and Network Communications, CoCoNet 2018 - Astana, Kazakhstan Duration: Aug 15 2018 → Aug 17 2018

Conference	2nd International Conference on Computing and Network Communications, CoCoNet 2018
Country	Kazakhstan
City	Astana
Period	8/15/18 → 8/17/18

Cite this

Khusro, A., Hashmi, M., & Ansari, A. Q. (2018). Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor. Paper presented at 2nd International Conference on Computing and Network Communications, CoCoNet 2018, Astana, Kazakhstan.

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author = "Ahmad Khusro and Mohammad Hashmi and Ansari, {Abdul Qayyum}",

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language = "English",

note = "2nd International Conference on Computing and Network Communications, CoCoNet 2018 ; Conference date: 15-08-2018 Through 17-08-2018",

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T1 - Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor

AU - Khusro, Ahmad

AU - Hashmi, Mohammad

AU - Ansari, Abdul Qayyum

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Y1 - 2018/8/15

M3 - Paper

T2 - 2nd International Conference on Computing and Network Communications, CoCoNet 2018

Y2 - 15 August 2018 through 17 August 2018

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