Engineering the Schottky barrier heights in InGaAs metal-semiconductor- metal photodetectors

Walter A. Wohlmuth, Mohamed Arafa, Aaditya Mahajan, Patrick J. Fay, Ilesanmi Adesida

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An InGaAs metal-semiconductor-metal photodetector (MSMPD) that employs engineered Schottky barrier heights is proposed and demonstrated in this work. By engineering the barrier heights a significant decrease in dark current with no change in the responsivity or the bandwidth can be obtained in these devices in comparison to conventional MSMPDs. For MSMPDs with an electrode width and spacing of 2 micrometer, a photosensitive area of 2500 micrometer squared, and an applied bias of 5 V, dark currents of 1.42 nA, 381 pA, and 188 pA were obtained for the conventional Ti/Au, the conventional Pt/Ti/Pt/Au, and the engineered Pt/Ti/Pt/Au- Ti/Au MSMPDs, respectively. A Pt/Ti/Pt/Au-Ti/Au MSMPD with a 2 micrometer electrode width and spacing and a broad photosensitive area of 15625 micrometer squared exhibited a dark current density of 18.1 fA/micrometer squared which is lowest dark current density ever reported in literature for an InGaAs MSMPD. The responsivity and bandwidth of the conventional and the engineered MSMPDs was measured and was found to be virtually identical.

Original languageEnglish
Pages (from-to)52-60
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3006
DOIs
Publication statusPublished - 1997
Externally publishedYes

Fingerprint

InGaAs
Photodetector
Photodetectors
photometers
Semiconductors
Dark Current
Metals
Dark currents
micrometers
engineering
Semiconductor materials
dark current
Engineering
metals
Responsivity
Spacing
Electrode
Current density
Bandwidth
spacing

Keywords

  • Indium gallium arsenide
  • Metal-semiconductor-metal
  • MSM
  • Photodetector
  • Photodiode

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Engineering the Schottky barrier heights in InGaAs metal-semiconductor- metal photodetectors. / Wohlmuth, Walter A.; Arafa, Mohamed; Mahajan, Aaditya; Fay, Patrick J.; Adesida, Ilesanmi.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3006, 1997, p. 52-60.

Research output: Contribution to journalArticle

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