TY - JOUR
T1 - Enhanced gas sensing properties of In doped ZnO thin films
AU - Soltabayev, Baktiyar
AU - Mentbayeva, Almagul
AU - Acar, Selim
N1 - Funding Information:
This research was supported by the research grant (CRP) 021220CRP0122 “Development of highly sensitive MOS based nano-film gas sensors” from Nazarbayev University.
Publisher Copyright:
© 2021 Elsevier Ltd. All rights reserved.
PY - 2021
Y1 - 2021
N2 - In the present work, the effect of indium (In) doping on the various properties of the zinc oxide (ZnO) thin films was investigated. The pure and 5% In doped ZnO thin films have been synthesized via the successive ionic layer adsorption and reaction (SILAR) method on glass substrates. The X-Ray Diffraction (XRD) analysis clearly indicated the well-crystalline wurtzite structure of ZnO and 5% In-ZnO films. The Scanning Electron Microscopy (SEM) study depicted the formation of granular and nanoflower structures on the surface of the synthesized films. The band-gap energy and the grain size values of 5% In-ZnO were found to be 3.32 eV and 22.33 nm, respectively. Also, the indium incorporation into ZnO made a significant change on the structural, morphological properties, and enhanced the gas-sensing performance of ZnO host material.
AB - In the present work, the effect of indium (In) doping on the various properties of the zinc oxide (ZnO) thin films was investigated. The pure and 5% In doped ZnO thin films have been synthesized via the successive ionic layer adsorption and reaction (SILAR) method on glass substrates. The X-Ray Diffraction (XRD) analysis clearly indicated the well-crystalline wurtzite structure of ZnO and 5% In-ZnO films. The Scanning Electron Microscopy (SEM) study depicted the formation of granular and nanoflower structures on the surface of the synthesized films. The band-gap energy and the grain size values of 5% In-ZnO were found to be 3.32 eV and 22.33 nm, respectively. Also, the indium incorporation into ZnO made a significant change on the structural, morphological properties, and enhanced the gas-sensing performance of ZnO host material.
KW - Gas sensor
KW - In doped ZnO
KW - NO
KW - SILAR
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U2 - 10.1016/j.matpr.2020.12.157
DO - 10.1016/j.matpr.2020.12.157
M3 - Conference article
AN - SCOPUS:85111598911
SN - 2214-7853
VL - 49
SP - 2495
EP - 2500
JO - Materials Today: Proceedings
JF - Materials Today: Proceedings
T2 - 8th International Conference on Nanomaterials and Advanced Energy Storage Systems, INESS 2020
Y2 - 6 August 2020 through 6 August 2020
ER -