Enhanced gas sensing properties of In doped ZnO thin films

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8 Citations (Scopus)


In the present work, the effect of indium (In) doping on the various properties of the zinc oxide (ZnO) thin films was investigated. The pure and 5% In doped ZnO thin films have been synthesized via the successive ionic layer adsorption and reaction (SILAR) method on glass substrates. The X-Ray Diffraction (XRD) analysis clearly indicated the well-crystalline wurtzite structure of ZnO and 5% In-ZnO films. The Scanning Electron Microscopy (SEM) study depicted the formation of granular and nanoflower structures on the surface of the synthesized films. The band-gap energy and the grain size values of 5% In-ZnO were found to be 3.32 eV and 22.33 nm, respectively. Also, the indium incorporation into ZnO made a significant change on the structural, morphological properties, and enhanced the gas-sensing performance of ZnO host material.

Original languageEnglish
Pages (from-to)2495-2500
Number of pages6
JournalMaterials Today: Proceedings
Publication statusPublished - 2021
Event8th International Conference on Nanomaterials and Advanced Energy Storage Systems, INESS 2020 - Uttar Pradesh, India
Duration: Aug 6 2020Aug 6 2020


  • Gas sensor
  • In doped ZnO
  • NO

ASJC Scopus subject areas

  • Materials Science(all)


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