Enhanced gas sensing properties of In doped ZnO thin films

Baktiyar Soltabayev; Almagul Mentbayeva; Selim Acar

doi:10.1016/j.matpr.2020.12.157

Enhanced gas sensing properties of In doped ZnO thin films

Department of Chemical and Materials Engineering

Nazarbayev University
Gazi University

Research output: Contribution to journal › Conference article › peer-review

16 Citations (Scopus)

Abstract

In the present work, the effect of indium (In) doping on the various properties of the zinc oxide (ZnO) thin films was investigated. The pure and 5% In doped ZnO thin films have been synthesized via the successive ionic layer adsorption and reaction (SILAR) method on glass substrates. The X-Ray Diffraction (XRD) analysis clearly indicated the well-crystalline wurtzite structure of ZnO and 5% In-ZnO films. The Scanning Electron Microscopy (SEM) study depicted the formation of granular and nanoflower structures on the surface of the synthesized films. The band-gap energy and the grain size values of 5% In-ZnO were found to be 3.32 eV and 22.33 nm, respectively. Also, the indium incorporation into ZnO made a significant change on the structural, morphological properties, and enhanced the gas-sensing performance of ZnO host material.

Original language	English
Pages (from-to)	2495-2500
Number of pages	6
Journal	Materials Today: Proceedings
Volume	49
DOIs	https://doi.org/10.1016/j.matpr.2020.12.157
Publication status	Published - 2021
Event	8th International Conference on Nanomaterials and Advanced Energy Storage Systems, INESS 2020 - Uttar Pradesh, India Duration: Aug 6 2020 → Aug 6 2020

Funding

This research was supported by the research grant (CRP) 021220CRP0122 “Development of highly sensitive MOS based nano-film gas sensors” from Nazarbayev University.

Keywords

Gas sensor
In doped ZnO
NO
SILAR

ASJC Scopus subject areas

General Materials Science

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10.1016/j.matpr.2020.12.157

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title = "Enhanced gas sensing properties of In doped ZnO thin films",

abstract = "In the present work, the effect of indium (In) doping on the various properties of the zinc oxide (ZnO) thin films was investigated. The pure and 5\% In doped ZnO thin films have been synthesized via the successive ionic layer adsorption and reaction (SILAR) method on glass substrates. The X-Ray Diffraction (XRD) analysis clearly indicated the well-crystalline wurtzite structure of ZnO and 5\% In-ZnO films. The Scanning Electron Microscopy (SEM) study depicted the formation of granular and nanoflower structures on the surface of the synthesized films. The band-gap energy and the grain size values of 5\% In-ZnO were found to be 3.32 eV and 22.33 nm, respectively. Also, the indium incorporation into ZnO made a significant change on the structural, morphological properties, and enhanced the gas-sensing performance of ZnO host material.",

keywords = "Gas sensor, In doped ZnO, NO, SILAR",

author = "Baktiyar Soltabayev and Almagul Mentbayeva and Selim Acar",

note = "Funding Information: This research was supported by the research grant (CRP) 021220CRP0122 “Development of highly sensitive MOS based nano-film gas sensors” from Nazarbayev University. Publisher Copyright: {\textcopyright} 2021 Elsevier Ltd. All rights reserved.; 8th International Conference on Nanomaterials and Advanced Energy Storage Systems, INESS 2020 ; Conference date: 06-08-2020 Through 06-08-2020",

year = "2021",

doi = "10.1016/j.matpr.2020.12.157",

language = "English",

volume = "49",

pages = "2495--2500",

journal = "Materials Today: Proceedings",

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TY - JOUR

T1 - Enhanced gas sensing properties of In doped ZnO thin films

AU - Soltabayev, Baktiyar

AU - Mentbayeva, Almagul

AU - Acar, Selim

N1 - Funding Information: This research was supported by the research grant (CRP) 021220CRP0122 “Development of highly sensitive MOS based nano-film gas sensors” from Nazarbayev University. Publisher Copyright: © 2021 Elsevier Ltd. All rights reserved.

PY - 2021

Y1 - 2021

N2 - In the present work, the effect of indium (In) doping on the various properties of the zinc oxide (ZnO) thin films was investigated. The pure and 5% In doped ZnO thin films have been synthesized via the successive ionic layer adsorption and reaction (SILAR) method on glass substrates. The X-Ray Diffraction (XRD) analysis clearly indicated the well-crystalline wurtzite structure of ZnO and 5% In-ZnO films. The Scanning Electron Microscopy (SEM) study depicted the formation of granular and nanoflower structures on the surface of the synthesized films. The band-gap energy and the grain size values of 5% In-ZnO were found to be 3.32 eV and 22.33 nm, respectively. Also, the indium incorporation into ZnO made a significant change on the structural, morphological properties, and enhanced the gas-sensing performance of ZnO host material.

AB - In the present work, the effect of indium (In) doping on the various properties of the zinc oxide (ZnO) thin films was investigated. The pure and 5% In doped ZnO thin films have been synthesized via the successive ionic layer adsorption and reaction (SILAR) method on glass substrates. The X-Ray Diffraction (XRD) analysis clearly indicated the well-crystalline wurtzite structure of ZnO and 5% In-ZnO films. The Scanning Electron Microscopy (SEM) study depicted the formation of granular and nanoflower structures on the surface of the synthesized films. The band-gap energy and the grain size values of 5% In-ZnO were found to be 3.32 eV and 22.33 nm, respectively. Also, the indium incorporation into ZnO made a significant change on the structural, morphological properties, and enhanced the gas-sensing performance of ZnO host material.

KW - Gas sensor

KW - In doped ZnO

KW - NO

KW - SILAR

UR - https://www.scopus.com/pages/publications/85111598911

UR - https://www.scopus.com/pages/publications/85111598911#tab=citedBy

U2 - 10.1016/j.matpr.2020.12.157

DO - 10.1016/j.matpr.2020.12.157

M3 - Conference article

AN - SCOPUS:85111598911

SN - 2214-7853

VL - 49

SP - 2495

EP - 2500

JO - Materials Today: Proceedings

JF - Materials Today: Proceedings

T2 - 8th International Conference on Nanomaterials and Advanced Energy Storage Systems, INESS 2020

Y2 - 6 August 2020 through 6 August 2020

ER -

Enhanced gas sensing properties of In doped ZnO thin films

Abstract

Funding

Keywords

ASJC Scopus subject areas

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