Enhanced Raman scattering from vertical silicon nanowires array

Jian An Huang; Ying Qi Zhao; Xue Jin Zhang; Lin Bao Luo; Yan Kuan Liu; Juan Antonio Zapien; Charles Surya; Shuit Tong Lee

doi:10.1063/1.3584871

Enhanced Raman scattering from vertical silicon nanowires array

Jian An Huang, Ying Qi Zhao, Xue Jin Zhang, Lin Bao Luo, Yan Kuan Liu, Juan Antonio Zapien, Charles Surya, Shuit Tong Lee

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

We fabricated ordered hexagonal-packed vertical silicon nanowire (SiNW) arrays with varying diameters of 450-900 nm and varying lengths of 0.54-7.3 μm, and studied their Raman enhancement properties. We found the Raman enhancement per unit volume (REV) increased with decreasing wire diameters and oscillated with wire length, and the REV of seven 450-nm-diameter, 3-μm -long SiNWs was about twice that of a single SiNW having the same size. The differences were attributed to the vertical finite-length cylinder structures of the SiNW array, as supported by finite-difference-time-domain simulation results based on the helical resonant surface wave model.

Original language	English
Article number	183108
Journal	Applied Physics Letters
Volume	98
Issue number	18
DOIs	https://doi.org/10.1063/1.3584871
Publication status	Published - May 2 2011
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Enhanced Raman scattering from vertical silicon nanowires array",

abstract = "We fabricated ordered hexagonal-packed vertical silicon nanowire (SiNW) arrays with varying diameters of 450-900 nm and varying lengths of 0.54-7.3 μm, and studied their Raman enhancement properties. We found the Raman enhancement per unit volume (REV) increased with decreasing wire diameters and oscillated with wire length, and the REV of seven 450-nm-diameter, 3-μm -long SiNWs was about twice that of a single SiNW having the same size. The differences were attributed to the vertical finite-length cylinder structures of the SiNW array, as supported by finite-difference-time-domain simulation results based on the helical resonant surface wave model.",

author = "Huang, {Jian An} and Zhao, {Ying Qi} and Zhang, {Xue Jin} and Luo, {Lin Bao} and Liu, {Yan Kuan} and Zapien, {Juan Antonio} and Charles Surya and Lee, {Shuit Tong}",

note = "Funding Information: This work was supported by the Research Grants Council of Hong Kong SAR, China (Grant Nos. CityU5/CRF/08, CityU 101807, CityU 103409, and PolyU 5302/09E).",

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AU - Huang, Jian An

AU - Zhao, Ying Qi

AU - Zhang, Xue Jin

AU - Luo, Lin Bao

AU - Liu, Yan Kuan

AU - Zapien, Juan Antonio

AU - Surya, Charles

AU - Lee, Shuit Tong

N1 - Funding Information: This work was supported by the Research Grants Council of Hong Kong SAR, China (Grant Nos. CityU5/CRF/08, CityU 101807, CityU 103409, and PolyU 5302/09E).

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Y1 - 2011/5/2

N2 - We fabricated ordered hexagonal-packed vertical silicon nanowire (SiNW) arrays with varying diameters of 450-900 nm and varying lengths of 0.54-7.3 μm, and studied their Raman enhancement properties. We found the Raman enhancement per unit volume (REV) increased with decreasing wire diameters and oscillated with wire length, and the REV of seven 450-nm-diameter, 3-μm -long SiNWs was about twice that of a single SiNW having the same size. The differences were attributed to the vertical finite-length cylinder structures of the SiNW array, as supported by finite-difference-time-domain simulation results based on the helical resonant surface wave model.

AB - We fabricated ordered hexagonal-packed vertical silicon nanowire (SiNW) arrays with varying diameters of 450-900 nm and varying lengths of 0.54-7.3 μm, and studied their Raman enhancement properties. We found the Raman enhancement per unit volume (REV) increased with decreasing wire diameters and oscillated with wire length, and the REV of seven 450-nm-diameter, 3-μm -long SiNWs was about twice that of a single SiNW having the same size. The differences were attributed to the vertical finite-length cylinder structures of the SiNW array, as supported by finite-difference-time-domain simulation results based on the helical resonant surface wave model.

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Enhanced Raman scattering from vertical silicon nanowires array

Abstract

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