Enhanced Raman scattering from vertical silicon nanowires array

Jian An Huang, Ying Qi Zhao, Xue Jin Zhang, Lin Bao Luo, Yan Kuan Liu, Juan Antonio Zapien, Charles Surya, Shuit Tong Lee

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

We fabricated ordered hexagonal-packed vertical silicon nanowire (SiNW) arrays with varying diameters of 450-900 nm and varying lengths of 0.54-7.3 μm, and studied their Raman enhancement properties. We found the Raman enhancement per unit volume (REV) increased with decreasing wire diameters and oscillated with wire length, and the REV of seven 450-nm-diameter, 3-μm -long SiNWs was about twice that of a single SiNW having the same size. The differences were attributed to the vertical finite-length cylinder structures of the SiNW array, as supported by finite-difference-time-domain simulation results based on the helical resonant surface wave model.

Original languageEnglish
Article number183108
JournalApplied Physics Letters
Volume98
Issue number18
DOIs
Publication statusPublished - May 2 2011
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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