Enhanced Shubnikov-De Haas Oscillation in Nitrogen-Doped Graphene

Han Chun Wu, Mourad Abid, Ye Cun Wu, Cormac Ó Coileáin, Askar Syrlybekov, Jun Feng Han, Cheng Lin Heng, Huajun Liu, Mohamed Abid, Igor Shvets

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


N-doped graphene displays many interesting properties compared with pristine graphene, which makes it a potential candidate in many applications. Here, we report that the Shubnikov-de Haas (SdH) oscillation effect in graphene can be enhanced by N-doping. We show that the amplitude of the SdH oscillation increases with N-doping and reaches around 5k ω under a field of 14 T at 10 K for highly N-doped graphene, which is over 1 order of magnitude larger than the value found for pristine graphene devices with the same geometry. Moreover, in contrast to the well-established standard Lifshitz-Kosevich theory, the amplitude of the SdH oscillation decreases linearly with increasing temperature and persists up to a temperature of 150 K. Our results also show that the magnetoresistance (MR) in N-doped graphene increases with increasing temperature. Our results may be useful for the application of N-doped graphene in magnetic devices.

Original languageEnglish
Pages (from-to)7207-7214
Number of pages8
JournalACS Nano
Issue number7
Publication statusPublished - Jul 28 2015
Externally publishedYes


  • N-doped graphene
  • Shubnikov-de Haas oscillation
  • magnetoresistance
  • substitutional doping
  • two-dimensional transport

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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