Enhancement-mode InP-based HEMT devices and applications

I. Adesida, A. Mahajan, G. Cueva

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have established an enhancement/depletion (E/D) InP high electron mobility transistor (HEMT) process. The fabrication and characterization of circuits employing a direct-coupled FET logic (DCFL) technology are demonstrated using this process. A 23-stage ring oscillator was fabricated and tested. A room temperature propagation delay time (τpd) of 16.72 ps/stage as well as a subfemtojoule power-delay product (PDP) of only 0.322 fJ/stage were obtained for the oscillator which, to the best of the authors' knowledge, is the lowest reported PDP in the InP material system. Also a divide-by-four prescaler was also fabricated and characterized; this demonstrated functionality up to 6 GHz, with a power dissipation of only 5.37 mW/stage. This marks the first time that a prescaler has been fabricated in the InP material system using DCFL technology.

Original languageEnglish
Pages (from-to)493-496
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1998
Externally publishedYes

Fingerprint

High electron mobility transistors
Field effect transistors
high electron mobility transistors
logic
field effect transistors
oscillators
augmentation
products
Time delay
Energy dissipation
depletion
time lag
dissipation
Fabrication
fabrication
propagation
Networks (circuits)
rings
room temperature
Temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "We have established an enhancement/depletion (E/D) InP high electron mobility transistor (HEMT) process. The fabrication and characterization of circuits employing a direct-coupled FET logic (DCFL) technology are demonstrated using this process. A 23-stage ring oscillator was fabricated and tested. A room temperature propagation delay time (τpd) of 16.72 ps/stage as well as a subfemtojoule power-delay product (PDP) of only 0.322 fJ/stage were obtained for the oscillator which, to the best of the authors' knowledge, is the lowest reported PDP in the InP material system. Also a divide-by-four prescaler was also fabricated and characterized; this demonstrated functionality up to 6 GHz, with a power dissipation of only 5.37 mW/stage. This marks the first time that a prescaler has been fabricated in the InP material system using DCFL technology.",
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T1 - Enhancement-mode InP-based HEMT devices and applications

AU - Adesida, I.

AU - Mahajan, A.

AU - Cueva, G.

PY - 1998

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AB - We have established an enhancement/depletion (E/D) InP high electron mobility transistor (HEMT) process. The fabrication and characterization of circuits employing a direct-coupled FET logic (DCFL) technology are demonstrated using this process. A 23-stage ring oscillator was fabricated and tested. A room temperature propagation delay time (τpd) of 16.72 ps/stage as well as a subfemtojoule power-delay product (PDP) of only 0.322 fJ/stage were obtained for the oscillator which, to the best of the authors' knowledge, is the lowest reported PDP in the InP material system. Also a divide-by-four prescaler was also fabricated and characterized; this demonstrated functionality up to 6 GHz, with a power dissipation of only 5.37 mW/stage. This marks the first time that a prescaler has been fabricated in the InP material system using DCFL technology.

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