Enhancement-mode InP-based HEMT devices and applications

I. Adesida, A. Mahajan, G. Cueva

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

We have established an enhancement/depletion (E/D) InP high electron mobility transistor (HEMT) process. The fabrication and characterization of circuits employing a direct-coupled FET logic (DCFL) technology are demonstrated using this process. A 23-stage ring oscillator was fabricated and tested. A room temperature propagation delay time (τpd) of 16.72 ps/stage as well as a subfemtojoule power-delay product (PDP) of only 0.322 fJ/stage were obtained for the oscillator which, to the best of the authors' knowledge, is the lowest reported PDP in the InP material system. Also a divide-by-four prescaler was also fabricated and characterized; this demonstrated functionality up to 6 GHz, with a power dissipation of only 5.37 mW/stage. This marks the first time that a prescaler has been fabricated in the InP material system using DCFL technology.

Original languageEnglish
Pages (from-to)493-496
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - Dec 1 1998
EventProceedings of the 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Jpn
Duration: May 11 1998May 15 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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