Enhancement-mode in0.52Al0.48As/In 0.53Ga0.47As/InP HEMT utilising Ir/Ti/Pt/Au gate

S. Kim, J. H. Jang, I. Adesida

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

InAlAs/InGaAs/InP enhancement-mode high electron mobility transistors utilising Ir/Ti/Pt/Au gates have been fabricated and compared to devices with conventional Pt/Ti/Pt/Au gates. Enhancement-mode operation with threshold voltage of 134 mV was achieved for Ir-based devices with 0.25 μm gate length after a short anneal at 250°C. No change was observed in the magnitude of gm before and after anneal, indicating low metal diffusivity and high thermal stability for Ir-based devices.

Original languageEnglish
Pages (from-to)871-872
Number of pages2
JournalElectronics Letters
Volume41
Issue number15
DOIs
Publication statusPublished - Jul 21 2005

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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