Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes

C. P. Chan, T. M. Yue, C. Surya, A. M C Ng, A. B. Djurišić, F. Scholz, C. K. Liu, M. Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes (LEDs). The devices were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. After laser debonding the devices were photoelectrochemically (PEC) etched for the roughening of the debonded surface. The dependence of the luminous intensity of the LEDs as a function of the surface roughness was investigated in detailed. A 60% increase in the luminous intensity was observed. This increase is attributed to the enhancement in photon extraction efficiency.

Original languageEnglish
Title of host publication2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
Pages479-482
Number of pages4
DOIs
Publication statusPublished - Dec 1 2006
Externally publishedYes
Event2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong
Duration: Dec 19 2005Dec 21 2005

Conference

Conference2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
CountryHong Kong
CityHowloon
Period12/19/0512/21/05

Fingerprint

Debonding
Light emitting diodes
Lasers
Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
Photons
Surface roughness
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chan, C. P., Yue, T. M., Surya, C., Ng, A. M. C., Djurišić, A. B., Scholz, F., ... Li, M. (2006). Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC (pp. 479-482). [1635312] https://doi.org/10.1109/EDSSC.2005.1635312

Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes. / Chan, C. P.; Yue, T. M.; Surya, C.; Ng, A. M C; Djurišić, A. B.; Scholz, F.; Liu, C. K.; Li, M.

2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. 2006. p. 479-482 1635312.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chan, CP, Yue, TM, Surya, C, Ng, AMC, Djurišić, AB, Scholz, F, Liu, CK & Li, M 2006, Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes. in 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC., 1635312, pp. 479-482, 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC, Howloon, Hong Kong, 12/19/05. https://doi.org/10.1109/EDSSC.2005.1635312
Chan CP, Yue TM, Surya C, Ng AMC, Djurišić AB, Scholz F et al. Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes. In 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. 2006. p. 479-482. 1635312 https://doi.org/10.1109/EDSSC.2005.1635312
Chan, C. P. ; Yue, T. M. ; Surya, C. ; Ng, A. M C ; Djurišić, A. B. ; Scholz, F. ; Liu, C. K. ; Li, M. / Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes. 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. 2006. pp. 479-482
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