Abstract
We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes (LEDs). The devices were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. After laser debonding the devices were photoelectrochemically (PEC) etched for the roughening of the debonded surface. The dependence of the luminous intensity of the LEDs as a function of the surface roughness was investigated in detailed. A 60% increase in the luminous intensity was observed. This increase is attributed to the enhancement in photon extraction efficiency.
| Original language | English |
|---|---|
| Title of host publication | 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC |
| Pages | 479-482 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - Dec 1 2006 |
| Externally published | Yes |
| Event | 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC - Howloon, Hong Kong Duration: Dec 19 2005 → Dec 21 2005 |
Conference
| Conference | 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC |
|---|---|
| Country | Hong Kong |
| City | Howloon |
| Period | 12/19/05 → 12/21/05 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes. / Chan, C. P.; Yue, T. M.; Surya, C.; Ng, A. M C; Djurišić, A. B.; Scholz, F.; Liu, C. K.; Li, M.
2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC. 2006. p. 479-482 1635312.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Enhancement of extraction efficiency in laser-debonded GaN light emitting diodes
AU - Chan, C. P.
AU - Yue, T. M.
AU - Surya, C.
AU - Ng, A. M C
AU - Djurišić, A. B.
AU - Scholz, F.
AU - Liu, C. K.
AU - Li, M.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes (LEDs). The devices were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. After laser debonding the devices were photoelectrochemically (PEC) etched for the roughening of the debonded surface. The dependence of the luminous intensity of the LEDs as a function of the surface roughness was investigated in detailed. A 60% increase in the luminous intensity was observed. This increase is attributed to the enhancement in photon extraction efficiency.
AB - We conducted detailed investigations of laser-assisted debonding of GaN-based light emitting diodes (LEDs). The devices were grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. After laser debonding the devices were photoelectrochemically (PEC) etched for the roughening of the debonded surface. The dependence of the luminous intensity of the LEDs as a function of the surface roughness was investigated in detailed. A 60% increase in the luminous intensity was observed. This increase is attributed to the enhancement in photon extraction efficiency.
UR - http://www.scopus.com/inward/record.url?scp=43549096375&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=43549096375&partnerID=8YFLogxK
U2 - 10.1109/EDSSC.2005.1635312
DO - 10.1109/EDSSC.2005.1635312
M3 - Conference contribution
SN - 0780393392
SN - 9780780393394
SP - 479
EP - 482
BT - 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
ER -