Etching characteristics of AlxGa1-xAs in (NH4)2Sx solutions

Jong Wook Seo, Terry Koker, Sambhu Agarwala, Ilesanmi Adesida

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25 Citations (Scopus)

Abstract

The etching of GaAs and AlxGa1-xAs have been characterized in (NH4)2Sx solution with various excess sulfur concentrations and for temperatures ranging from 20 to 60°C. The etch rate varies with the concentration of excess sulfur and is highest at 60°C using a 4% excess sulfur solution. The etch rate of Al xGa1-xAs increases exponentially with increasing Al mole fraction. Activation energies of 19.8 and 15.9 kcal/mole are obtained for GaAs and Al0.3Ga0.7As in 4% (NH 4)2Sx, respectively. These high values and the linear time dependence of etch rates signify that the etching process of Al xGa1-xAs in (NH4)2S x solutions is predominantly reaction-rate limited. Possible chemical processes involved in the etching and the formation of a passivating sulfur layer are discussed.

Original languageEnglish
Pages (from-to)1114-1116
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number9
DOIs
Publication statusPublished - 1992
Externally publishedYes

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sulfur
etching
time dependence
reaction kinetics
activation energy
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Etching characteristics of AlxGa1-xAs in (NH4)2Sx solutions. / Seo, Jong Wook; Koker, Terry; Agarwala, Sambhu; Adesida, Ilesanmi.

In: Applied Physics Letters, Vol. 60, No. 9, 1992, p. 1114-1116.

Research output: Contribution to journalArticle

Seo, Jong Wook ; Koker, Terry ; Agarwala, Sambhu ; Adesida, Ilesanmi. / Etching characteristics of AlxGa1-xAs in (NH4)2Sx solutions. In: Applied Physics Letters. 1992 ; Vol. 60, No. 9. pp. 1114-1116.
@article{5d3b02a520e040a4b9aaa18cd088d2a8,
title = "Etching characteristics of AlxGa1-xAs in (NH4)2Sx solutions",
abstract = "The etching of GaAs and AlxGa1-xAs have been characterized in (NH4)2Sx solution with various excess sulfur concentrations and for temperatures ranging from 20 to 60°C. The etch rate varies with the concentration of excess sulfur and is highest at 60°C using a 4{\%} excess sulfur solution. The etch rate of Al xGa1-xAs increases exponentially with increasing Al mole fraction. Activation energies of 19.8 and 15.9 kcal/mole are obtained for GaAs and Al0.3Ga0.7As in 4{\%} (NH 4)2Sx, respectively. These high values and the linear time dependence of etch rates signify that the etching process of Al xGa1-xAs in (NH4)2S x solutions is predominantly reaction-rate limited. Possible chemical processes involved in the etching and the formation of a passivating sulfur layer are discussed.",
author = "Seo, {Jong Wook} and Terry Koker and Sambhu Agarwala and Ilesanmi Adesida",
year = "1992",
doi = "10.1063/1.106461",
language = "English",
volume = "60",
pages = "1114--1116",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Etching characteristics of AlxGa1-xAs in (NH4)2Sx solutions

AU - Seo, Jong Wook

AU - Koker, Terry

AU - Agarwala, Sambhu

AU - Adesida, Ilesanmi

PY - 1992

Y1 - 1992

N2 - The etching of GaAs and AlxGa1-xAs have been characterized in (NH4)2Sx solution with various excess sulfur concentrations and for temperatures ranging from 20 to 60°C. The etch rate varies with the concentration of excess sulfur and is highest at 60°C using a 4% excess sulfur solution. The etch rate of Al xGa1-xAs increases exponentially with increasing Al mole fraction. Activation energies of 19.8 and 15.9 kcal/mole are obtained for GaAs and Al0.3Ga0.7As in 4% (NH 4)2Sx, respectively. These high values and the linear time dependence of etch rates signify that the etching process of Al xGa1-xAs in (NH4)2S x solutions is predominantly reaction-rate limited. Possible chemical processes involved in the etching and the formation of a passivating sulfur layer are discussed.

AB - The etching of GaAs and AlxGa1-xAs have been characterized in (NH4)2Sx solution with various excess sulfur concentrations and for temperatures ranging from 20 to 60°C. The etch rate varies with the concentration of excess sulfur and is highest at 60°C using a 4% excess sulfur solution. The etch rate of Al xGa1-xAs increases exponentially with increasing Al mole fraction. Activation energies of 19.8 and 15.9 kcal/mole are obtained for GaAs and Al0.3Ga0.7As in 4% (NH 4)2Sx, respectively. These high values and the linear time dependence of etch rates signify that the etching process of Al xGa1-xAs in (NH4)2S x solutions is predominantly reaction-rate limited. Possible chemical processes involved in the etching and the formation of a passivating sulfur layer are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0347679354&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347679354&partnerID=8YFLogxK

U2 - 10.1063/1.106461

DO - 10.1063/1.106461

M3 - Article

VL - 60

SP - 1114

EP - 1116

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -