Etching for GaN laser facets and material characterization

I. Adesida, C. Youtsey, A. T. Ping, F. Khan, L. T. Romano, G. Bulman

Research output: Contribution to journalArticle

Abstract

The ability to remove or etch surface materials is a fundamental device processing step and is required to obtain mesa stripes in laser diode fabrication. This is particularly important for GaN-based laser diodes since the substrates, sapphire and SiC, on which the epitaxial materials are grown cannot be easily cleaved. The wide range of dry and wet etching techniques developed for GaN-based materials are described. The dry etching techniques include reactive ion etching (RIE), electron cyclotron RIE, inductively-coupled plasma RIE, chemically-assisted ion beam etching, and low-energy electron enhanced etching. Photoelectrochemical wet etching is used in the etching of n-type GaN.

Original languageEnglish
Pages (from-to)364-365
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
Publication statusPublished - 1998
Externally publishedYes

Fingerprint

Reactive ion etching
Etching
Dry etching
Wet etching
Semiconductor lasers
Lasers
Electrons
Plasma etching
Aluminum Oxide
Cyclotrons
Inductively coupled plasma
Sapphire
Ion beams
Fabrication
Substrates
Processing

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Etching for GaN laser facets and material characterization. / Adesida, I.; Youtsey, C.; Ping, A. T.; Khan, F.; Romano, L. T.; Bulman, G.

In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, Vol. 1, 1998, p. 364-365.

Research output: Contribution to journalArticle

Adesida, I. ; Youtsey, C. ; Ping, A. T. ; Khan, F. ; Romano, L. T. ; Bulman, G. / Etching for GaN laser facets and material characterization. In: Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 1998 ; Vol. 1. pp. 364-365.
@article{78c1c7150bb44e2e9b8f9a964f5126c0,
title = "Etching for GaN laser facets and material characterization",
abstract = "The ability to remove or etch surface materials is a fundamental device processing step and is required to obtain mesa stripes in laser diode fabrication. This is particularly important for GaN-based laser diodes since the substrates, sapphire and SiC, on which the epitaxial materials are grown cannot be easily cleaved. The wide range of dry and wet etching techniques developed for GaN-based materials are described. The dry etching techniques include reactive ion etching (RIE), electron cyclotron RIE, inductively-coupled plasma RIE, chemically-assisted ion beam etching, and low-energy electron enhanced etching. Photoelectrochemical wet etching is used in the etching of n-type GaN.",
author = "I. Adesida and C. Youtsey and Ping, {A. T.} and F. Khan and Romano, {L. T.} and G. Bulman",
year = "1998",
language = "English",
volume = "1",
pages = "364--365",
journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",
issn = "1092-8081",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Etching for GaN laser facets and material characterization

AU - Adesida, I.

AU - Youtsey, C.

AU - Ping, A. T.

AU - Khan, F.

AU - Romano, L. T.

AU - Bulman, G.

PY - 1998

Y1 - 1998

N2 - The ability to remove or etch surface materials is a fundamental device processing step and is required to obtain mesa stripes in laser diode fabrication. This is particularly important for GaN-based laser diodes since the substrates, sapphire and SiC, on which the epitaxial materials are grown cannot be easily cleaved. The wide range of dry and wet etching techniques developed for GaN-based materials are described. The dry etching techniques include reactive ion etching (RIE), electron cyclotron RIE, inductively-coupled plasma RIE, chemically-assisted ion beam etching, and low-energy electron enhanced etching. Photoelectrochemical wet etching is used in the etching of n-type GaN.

AB - The ability to remove or etch surface materials is a fundamental device processing step and is required to obtain mesa stripes in laser diode fabrication. This is particularly important for GaN-based laser diodes since the substrates, sapphire and SiC, on which the epitaxial materials are grown cannot be easily cleaved. The wide range of dry and wet etching techniques developed for GaN-based materials are described. The dry etching techniques include reactive ion etching (RIE), electron cyclotron RIE, inductively-coupled plasma RIE, chemically-assisted ion beam etching, and low-energy electron enhanced etching. Photoelectrochemical wet etching is used in the etching of n-type GaN.

UR - http://www.scopus.com/inward/record.url?scp=0032289394&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032289394&partnerID=8YFLogxK

M3 - Article

VL - 1

SP - 364

EP - 365

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

SN - 1092-8081

ER -