Etching for GaN laser facets and material characterization

I. Adesida, C. Youtsey, A. T. Ping, F. Khan, L. T. Romano, G. Bulman

Research output: Contribution to journalConference articlepeer-review

Abstract

The ability to remove or etch surface materials is a fundamental device processing step and is required to obtain mesa stripes in laser diode fabrication. This is particularly important for GaN-based laser diodes since the substrates, sapphire and SiC, on which the epitaxial materials are grown cannot be easily cleaved. The wide range of dry and wet etching techniques developed for GaN-based materials are described. The dry etching techniques include reactive ion etching (RIE), electron cyclotron RIE, inductively-coupled plasma RIE, chemically-assisted ion beam etching, and low-energy electron enhanced etching. Photoelectrochemical wet etching is used in the etching of n-type GaN.

Original languageEnglish
Pages (from-to)364-365
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume1
Publication statusPublished - Dec 1 1998
EventProceedings of the 1998 11th Annual Meeting IEEE Lasers and Electro-Optics Society, LEOS. Part 2 (of 2) - Orlando, FL, USA
Duration: Dec 1 1998Dec 4 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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