Etching for GaN laser facets and material characterization

Keyphrases

• Material Characterization 100%
• Etching Process 100%
• Reactive Ion Etching 100%
• Dry Etching 100%
• Wet Etching 100%
• GaN Laser 100%
• Processing Stages 50%
• Epitaxial 50%
• Photoelectrochemical 50%
• Surface Material 50%
• Diode Laser 50%
• Device Processing 50%
• Sapphire 50%
• Inductively Coupled Plasma Reactive Ion Etching 50%
• Chemically Assisted Ion Beam Etching 50%
• N-type GaN 50%
• Electron Cyclotron 50%
• Low-energy Electrons 50%
• GaN Material 50%
• GaN-based Laser Diode 50%

INIS

• lasers 100%
• gallium nitrides 100%
• etching 100%
• ions 30%
• electrons 20%
• energy 10%
• range 10%
• surfaces 10%
• processing 10%
• fabrication 10%
• substrates 10%
• devices 10%
• ion beams 10%
• silicon carbides 10%
• plasma 10%
• epitaxy 10%
• sapphire 10%
• cyclotrons 10%

Material Science

• Reactive Ion Etching 100%
• Laser Diode 66%
• Dry Etching 66%
• Wet Etching 66%
• Sapphire 33%