Etching of InP in methane-based plasmas

I. Adesida, E. Andideh, C. Jones, N. Finnegan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Analyses of InP and SiO2 mask surfaces etched in CH4/H2 plasma have been performed using X-ray photoelectron spectroscopy and Auger electron spectroscopy. A relatively thick polymer layer was detected on the mask surface, whereas polymer deposition on etched InP surface was insignificant even under plasma conditions designed to enhance polymer formation. Subsequent processing of etched InP in O2 plasma followed by a dip in HCl/H2O was found to be sufficient for obtaining clean surfaces with good stoichiometry.

Original languageEnglish
Title of host publicationSecond International Conference on Indium Phosphide and Related Materials
PublisherPubl by IEEE
Pages405-408
Number of pages4
Publication statusPublished - 1990
Externally publishedYes
EventSecond International Conference on Indium Phosphide and Related Materials - Denver, CO, USA
Duration: Apr 23 1990Apr 25 1990

Other

OtherSecond International Conference on Indium Phosphide and Related Materials
CityDenver, CO, USA
Period4/23/904/25/90

Fingerprint

Etching
Methane
Plasmas
Masks
Polymers
Auger electron spectroscopy
Stoichiometry
X ray photoelectron spectroscopy
Processing

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Adesida, I., Andideh, E., Jones, C., & Finnegan, N. (1990). Etching of InP in methane-based plasmas. In Second International Conference on Indium Phosphide and Related Materials (pp. 405-408). Publ by IEEE.

Etching of InP in methane-based plasmas. / Adesida, I.; Andideh, E.; Jones, C.; Finnegan, N.

Second International Conference on Indium Phosphide and Related Materials. Publ by IEEE, 1990. p. 405-408.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Adesida, I, Andideh, E, Jones, C & Finnegan, N 1990, Etching of InP in methane-based plasmas. in Second International Conference on Indium Phosphide and Related Materials. Publ by IEEE, pp. 405-408, Second International Conference on Indium Phosphide and Related Materials, Denver, CO, USA, 4/23/90.
Adesida I, Andideh E, Jones C, Finnegan N. Etching of InP in methane-based plasmas. In Second International Conference on Indium Phosphide and Related Materials. Publ by IEEE. 1990. p. 405-408
Adesida, I. ; Andideh, E. ; Jones, C. ; Finnegan, N. / Etching of InP in methane-based plasmas. Second International Conference on Indium Phosphide and Related Materials. Publ by IEEE, 1990. pp. 405-408
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