Etching of silicon carbide for device fabrication and through via-hole formation

F. A. Khan, B. Roof, L. Zhou, I. Adesida

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

We have investigated the etching of SiC using inductively-coupled-plasma reactive ion etching with SF6-based and Cl2-based gas mixtures. Etch rates have been investigated as functions of bias voltage, ICP coil power, and chamber pressure. It will be shown, for the first time, that SiC surfaces etched in Cl2-based plasma yield better surface electrical characteristics than those etched in SF6-based plasmas. We have also achieved SiC etch rates in excess of 1 μm/min which are suitable for micro-machining and via-hole applications. Through via-holes obtained in 140 μm thick SiC at an effective etch rate of 824 nm/min have been achieved. To the best of our knowledge, to date, this is the highest effective etch rate for a through via-hole etched with a masking process compatible with microelectronic fabrication.

Original languageEnglish
Pages (from-to)212-219
Number of pages8
JournalJournal of Electronic Materials
Volume30
Issue number3
DOIs
Publication statusPublished - Mar 2001

Keywords

  • Etching
  • Silicon carbide
  • Surface damage
  • Via-hole

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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