EVIDENCE OF CRYSTALLOGRAPHIC ETCHING IN (100)GaAs USING SiCl//4 REACTIVE ION ETCHING.

J. Z. Li, E. D. Wolf, I. Adesida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Citations (Scopus)

Abstract

Etch rate and etch profile characteristics of (100)GaAs in SiCl//4 reactive ion etching have been studied in the pressure range of 2-110 mTorr. Pronounced crystallographic or orientation dependent etching effects were observed at moderate pressures around 20 mTorr at lower power densities. Etch profiles became vertical at lower pressures. Therefore, pattern profiles with perfectly vertical sidewalls or with sidewalls defined by crystallographic planes can be realized merely by changing the etch conditions. The addition of argon to the etch gas increased the edge sharpness of the vertical profiles and eliminated any trace of orientation dependent etching. Sawtooth gratings and submicrometer structures with high aspect ratios have been fabricated.

Original languageEnglish
Title of host publicationJournal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Pages406-409
Number of pages4
Volume3
Edition1
DOIs
Publication statusPublished - Jan 1 1984
EventProc of the 1984 Int Symp on Electron, Ion, and Photon Beams - Tarrytown, NY, USA
Duration: May 29 1984Jun 1 1984

Other

OtherProc of the 1984 Int Symp on Electron, Ion, and Photon Beams
CityTarrytown, NY, USA
Period5/29/846/1/84

ASJC Scopus subject areas

  • Engineering(all)

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