INIS
simulation
100%
electron beams
100%
electrons
75%
substrates
50%
resolution
50%
polymethylmethacrylates
50%
comparative evaluations
25%
surfaces
25%
excitation
25%
silicon
25%
films
25%
monte carlo method
25%
organic matter
25%
etching
25%
resist
25%
energy-loss spectroscopy
25%
inelastic scattering
25%
kev range
25%
excitation functions
25%
mean free path
25%
Engineering
Nanometre
100%
Electron Optical Lithography
100%
Secondary Electrons
66%
Development Process
33%
Organic Material
33%
Silicon Substrate
33%
Energy Dissipation
33%
Etching Process
33%
Intersects
33%
Single Electron
33%
Loss Spectrum
33%
Line Profile
33%
Mean Free Path
33%
Material Science
Lithography
100%
Silicon
33%
Electron Energy Loss Spectrometry
33%
Thick Films
33%