Extreme Radiation Resistance of Self-Powered High-Performance Cs0.04Rb0.04(FA0.65MA0.35)0.92Pb(I0.85Br0.14Cl0.01)3 Perovskite Photodiodes

Mykhailo M. Solovan; Andriy I. Mostovyi; Damir Aidarkhanov; Hryhorii P. Parkhomenko; Gulnur Akhtanova; Nora Schopp; Ernest A. Asare; Dosbol Nauruzbayev; Marat Kaikanov; Annie Ng; Viktor V. Brus

doi:10.1002/adom.202203001

Extreme Radiation Resistance of Self-Powered High-Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes

Mykhailo M. Solovan, Andriy I. Mostovyi, Damir Aidarkhanov, Hryhorii P. Parkhomenko, Gulnur Akhtanova, Nora Schopp, Ernest A. Asare, Dosbol Nauruzbayev, Marat Kaikanov, Annie Ng, Viktor V. Brus

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

This work reports, for the first time, on radiation resistance of state-of-the-art multicomponent Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ perovskite photodiodes, tested under high-intensity pulsed 170 keV proton irradiation with fluence up to 10¹³ protons cm⁻². The studied photodiodes demonstrate record radiation resistance among reported analogous optoelectronic devices. Specifically, it is shown that the proton irradiation with the fluence of 2 × 10¹² protons cm⁻² even leads to a slight improvement in the photodiode parameters. Nonetheless, a large fluence of 10¹³ protons cm⁻² deteriorates photodiode parameters on average by only 25% with respect to that of the as-prepared devices. The revealed high-performance and advanced radiation hardness demonstrate the huge application potential of lightweight and low-cost solution-processed perovskite optoelectronic devices in sensing and communication networks operating under harsh space conditions.

Original language	English
Article number	2203001
Journal	Advanced Optical Materials
Volume	11
Issue number	10
DOIs	https://doi.org/10.1002/adom.202203001
Publication status	Published - May 19 2023

Keywords

detectivity
hybrid perovskites
photodiodes
radiation resistance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Access to Document

10.1002/adom.202203001

Cite this

Solovan, M. M., Mostovyi, A. I., Aidarkhanov, D., Parkhomenko, H. P., Akhtanova, G., Schopp, N., Asare, E. A., Nauruzbayev, D., Kaikanov, M., Ng, A., & Brus, V. V. (2023). Extreme Radiation Resistance of Self-Powered High-Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes. Advanced Optical Materials, 11(10), Article 2203001. https://doi.org/10.1002/adom.202203001

Solovan, MM, Mostovyi, AI, Aidarkhanov, D, Parkhomenko, HP, Akhtanova, G, Schopp, N, Asare, EA, Nauruzbayev, D , Kaikanov, M , Ng, A & Brus, VV 2023, 'Extreme Radiation Resistance of Self-Powered High-Performance Cs_0.04Rb_0.04(FA_0.65MA_0.35)_0.92Pb(I_0.85Br_0.14Cl_0.01)₃ Perovskite Photodiodes', Advanced Optical Materials, vol. 11, no. 10, 2203001. https://doi.org/10.1002/adom.202203001

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abstract = "This work reports, for the first time, on radiation resistance of state-of-the-art multicomponent Cs0.04Rb0.04(FA0.65MA0.35)0.92Pb(I0.85Br0.14Cl0.01)3 perovskite photodiodes, tested under high-intensity pulsed 170 keV proton irradiation with fluence up to 1013 protons cm−2. The studied photodiodes demonstrate record radiation resistance among reported analogous optoelectronic devices. Specifically, it is shown that the proton irradiation with the fluence of 2 × 1012 protons cm−2 even leads to a slight improvement in the photodiode parameters. Nonetheless, a large fluence of 1013 protons cm−2 deteriorates photodiode parameters on average by only 25% with respect to that of the as-prepared devices. The revealed high-performance and advanced radiation hardness demonstrate the huge application potential of lightweight and low-cost solution-processed perovskite optoelectronic devices in sensing and communication networks operating under harsh space conditions.",

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AU - Ng, Annie

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