Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC

K. K. Diogu, G. L. Harris, A. Mahajan, I. Adesida, D. F. Moeller, R. A. Bertram

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Although β-SiC exhibit attractive physical and chemical properties, previous implementation of integrated circuits in the SiC MESFET technology have been hindered by low device gain and lack of complementary devices. These limitations have been overcome by an operational amplifier circuit using improved circuit design techniques and processing/materials technology. This amplifier has been implemented with 1μm gate geometries using direct write e-beam lithography to achieve high frequency operation.

Original languageEnglish
Title of host publicationAnnual Device Research Conference Digest
PublisherIEEE
Pages160-161
Number of pages2
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA
Duration: Jun 24 1996Jun 26 1996

Other

OtherProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CitySanta Barbara, CA, USA
Period6/24/966/26/96

Fingerprint

Operational amplifiers
Fabrication
Networks (circuits)
Chemical properties
Lithography
Integrated circuits
Physical properties
Temperature
Geometry
Processing

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Diogu, K. K., Harris, G. L., Mahajan, A., Adesida, I., Moeller, D. F., & Bertram, R. A. (1996). Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC. In Annual Device Research Conference Digest (pp. 160-161). IEEE.

Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC. / Diogu, K. K.; Harris, G. L.; Mahajan, A.; Adesida, I.; Moeller, D. F.; Bertram, R. A.

Annual Device Research Conference Digest. IEEE, 1996. p. 160-161.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Diogu, KK, Harris, GL, Mahajan, A, Adesida, I, Moeller, DF & Bertram, RA 1996, Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC. in Annual Device Research Conference Digest. IEEE, pp. 160-161, Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, 6/24/96.
Diogu KK, Harris GL, Mahajan A, Adesida I, Moeller DF, Bertram RA. Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC. In Annual Device Research Conference Digest. IEEE. 1996. p. 160-161
Diogu, K. K. ; Harris, G. L. ; Mahajan, A. ; Adesida, I. ; Moeller, D. F. ; Bertram, R. A. / Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC. Annual Device Research Conference Digest. IEEE, 1996. pp. 160-161
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