Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC

K. K. Diogu, G. L. Harris, A. Mahajan, I. Adesida, D. F. Moeller, R. A. Bertram

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

Although β-SiC exhibit attractive physical and chemical properties, previous implementation of integrated circuits in the SiC MESFET technology have been hindered by low device gain and lack of complementary devices. These limitations have been overcome by an operational amplifier circuit using improved circuit design techniques and processing/materials technology. This amplifier has been implemented with 1μm gate geometries using direct write e-beam lithography to achieve high frequency operation.

Original languageEnglish
Pages160-161
Number of pages2
Publication statusPublished - Jan 1 1996
EventProceedings of the 1996 54th Annual Device Research Conference Digest, DRC - Santa Barbara, CA, USA
Duration: Jun 24 1996Jun 26 1996

Other

OtherProceedings of the 1996 54th Annual Device Research Conference Digest, DRC
CitySanta Barbara, CA, USA
Period6/24/966/26/96

ASJC Scopus subject areas

  • Engineering(all)

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    Diogu, K. K., Harris, G. L., Mahajan, A., Adesida, I., Moeller, D. F., & Bertram, R. A. (1996). Fabrication and characterization of a 83 MHz high temperature β-SiC MESFET operational amplifier with an AlN isolation layer on (100) 6H-SiC. 160-161. Paper presented at Proceedings of the 1996 54th Annual Device Research Conference Digest, DRC, Santa Barbara, CA, USA, .