Fabrication and characterization of anisotype heterojunctions n-TiN/p-CdTe

M. M. Solovan, V. V. Brus, P. D. Maryanchuk, M. I. Ilashchuk, J. Rappich, N. Nickel, S. L. Abashin

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19 Citations (Scopus)


Photosensitive heterojunctions n-TiN/p-CdTe were fabricated for the first time by means of titanium nitride thin film deposition (n-type conductivity) by the reactive magnetron sputtering onto freshly etched single crystal substrates CdTe (1 1 0) of p-type conductivity. The temperature dependences of the height of the potential barrier and series resistance of the n-TiN/p-CdTe heterojunction were investigated. The dominating current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage Voc = 0.35 V, short-circuit current Isc = 1.88 mA -2 and fill factor FF = 0.51 under illumination 80 mW m-2.

Original languageEnglish
Article number015007
JournalSemiconductor Science and Technology
Issue number1
Publication statusPublished - Jan 2014
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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