Fabrication and characterization of InGaAs-GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition

Mark L. Osowski, R. Panepucci, E. E. Reuter, Stephen G. Bishop, Ilesanmi Adesida, James J. Coleman

Research output: Contribution to journalArticle

Abstract

We discuss the fabrication and optical characterization of strained-layer InGaAs-GaAs nanometer scale wire arrays grown by selective-area MOCVD on silicon dioxide patterned substrates. The wire patterns studied were obtained by high resolution electron beam lithography on PMMA using a silicon dioxide lift-off process. The dependence of the growth structure on the wire orientation is presented. Wire arrays aligned parallel to the [011] crystal direction are found to be the extremely useful for the growth of narrow quantum wire structures. Due to the faceted nature of the growth, a large non-linear enhancement of growth inside the wire region is observed. In addition, the results of gas phase diffusion growth simulations on the expected inhomogeneity of the fabricated quantum wires are presented. The degree of inhomogeneity of fabricated quantum wire arrays was studied by spatially resolved photoluminescence. Our results show that a suitable patterning technique, coupled with proper growth conditions, could allow control of the selective growth profile across the wire array. Finally, the growth of strained wires with a lateral dimension of less than 50 nm is displayed along with optical characterization of the quantum wires by low temperature photoluminescence.

Original languageEnglish
Pages (from-to)166-181
Number of pages16
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2918
DOIs
Publication statusPublished - 1997
Externally publishedYes

Fingerprint

Quantum Wires
Semiconductor quantum wires
InGaAs
Chemical Vapor Deposition
Metallorganic chemical vapor deposition
Gallium Arsenide
quantum wires
metalorganic chemical vapor deposition
Fabrication
wire
Wire
fabrication
Photoluminescence
Inhomogeneity
Silicon Dioxide
Silicon
MOCVD
inhomogeneity
Electron Beam Lithography
Silica

Keywords

  • InGaAs
  • MOCVD
  • Quantum wire
  • Selective-area epitaxy
  • Strained-layer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Fabrication and characterization of InGaAs-GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition. / Osowski, Mark L.; Panepucci, R.; Reuter, E. E.; Bishop, Stephen G.; Adesida, Ilesanmi; Coleman, James J.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 2918, 1997, p. 166-181.

Research output: Contribution to journalArticle

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AU - Bishop, Stephen G.

AU - Adesida, Ilesanmi

AU - Coleman, James J.

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