Fabrication and characterization of In0.52Al0.48As/In0.53Ga0.47As E/D-HEMTs on InP substrates

J. H. Jang, S. Kim, I. Adesida

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The design, fabrication, and electrical characterization of enhancement-mode HEMTs (E-HEMTs) and depletion-mode HEMTs (D-HEMTs) on a common InP substrate are reported. The integration of E- and D-HEMTs (E/D-HEMTs) is a potentially useful technology for the realization of high-speed, low-power digital circuits. The layer structures for E/D-HEMTs were optimized in terms of the thicknesses of the spacer and Schottky layers and sheet carrier concentration in the channel. The buried-Pt gate technology was utilized to achieve the desired threshold voltages for both 0.15 μm gate E- and D-HEMTs. The fabricated devices exhibited threshold voltages of -0.3 and 0.1 V, peak transconductance (Gm,max) values that are higher than 1020 and 1050 mS/mm, and the voltages where the peak transconductances occurred (Vgp) were 0.0 and 0.4 V for D- and E-HEMTs, respectively. Unity gain cut-off frequencies (fT's) above 190 and 180 GHz were obtained for D-HEMTs and E-HEMTs, respectively.

Original languageEnglish
Pages (from-to)758-762
Number of pages5
JournalSolid-State Electronics
Volume50
Issue number5
DOIs
Publication statusPublished - May 1 2006

Keywords

  • Depletion-mode HEMT
  • E/D-HEMT
  • Enhancement-mode
  • HEMT
  • InP

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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