Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors

H. F. Lui, W. K. Fong, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report the novel design of an erythemal UV photodetector consisting of two Ni/GaN Schottky junctions in anti-parallel confuration. A polymer film was deposited on top of one of the junctions. This configuration enables cancellation of photocurrent for wavelengths above 300 nm.

Original languageEnglish
Title of host publication2009 14th OptoElectronics and Communications Conference, OECC 2009
DOIs
Publication statusPublished - Nov 10 2009
Externally publishedYes
Event2009 14th OptoElectronics and Communications Conference, OECC 2009 - Hong Kong, China
Duration: Jul 13 2009Jul 17 2009

Conference

Conference2009 14th OptoElectronics and Communications Conference, OECC 2009
CountryChina
CityHong Kong
Period7/13/097/17/09

Fingerprint

Ultraviolet detectors
Photodetectors
Photocurrents
Polymer films
Fabrication
Wavelength

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Communication

Cite this

Lui, H. F., Fong, W. K., & Surya, C. (2009). Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors. In 2009 14th OptoElectronics and Communications Conference, OECC 2009 [5218127] https://doi.org/10.1109/OECC.2009.5218127

Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors. / Lui, H. F.; Fong, W. K.; Surya, C.

2009 14th OptoElectronics and Communications Conference, OECC 2009. 2009. 5218127.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lui, HF, Fong, WK & Surya, C 2009, Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors. in 2009 14th OptoElectronics and Communications Conference, OECC 2009., 5218127, 2009 14th OptoElectronics and Communications Conference, OECC 2009, Hong Kong, China, 7/13/09. https://doi.org/10.1109/OECC.2009.5218127
Lui HF, Fong WK, Surya C. Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors. In 2009 14th OptoElectronics and Communications Conference, OECC 2009. 2009. 5218127 https://doi.org/10.1109/OECC.2009.5218127
Lui, H. F. ; Fong, W. K. ; Surya, C. / Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors. 2009 14th OptoElectronics and Communications Conference, OECC 2009. 2009.
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