Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors

H. F. Lui, W. K. Fong, C. Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report the novel design of an erythemal UV photodetector consisting of two Ni/GaN Schottky junctions in anti-parallel confuration. A polymer film was deposited on top of one of the junctions. This configuration enables cancellation of photocurrent for wavelengths above 300 nm.

Original languageEnglish
Title of host publication2009 14th OptoElectronics and Communications Conference, OECC 2009
DOIs
Publication statusPublished - Nov 10 2009
Externally publishedYes
Event2009 14th OptoElectronics and Communications Conference, OECC 2009 - Hong Kong, China
Duration: Jul 13 2009Jul 17 2009

Publication series

Name2009 14th OptoElectronics and Communications Conference, OECC 2009

Conference

Conference2009 14th OptoElectronics and Communications Conference, OECC 2009
CountryChina
CityHong Kong
Period7/13/097/17/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Communication

Fingerprint Dive into the research topics of 'Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors'. Together they form a unique fingerprint.

Cite this