InAℓAs/InGaAs/InP MODFETS with gate lengths varying from 0.15 μm to 0.34 μm have been fabricated and characterized. Extrinsic transconductance as high as 545 mS/mm has been obtained with very good pinch-off characteristics. A unity current gain cut-off frequency fT of 112 GHz was obtained for 0.15 μm gate-length devices with fT decreasing as gate length increases. This high performance shows that InAℓAs/InGaAs/InP material system will be useful for millimeter wave analog and digital devices.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering