TY - JOUR
T1 - Fabrication and characterization of short gate-length InAℓAs/InGaAs/InP MODFETS
AU - Adesida, I.
AU - Ketterson, A. A.
AU - Brock, T. L.
AU - Laskar, J.
AU - Kolodzey, J.
AU - Aina, O.
AU - Hier, H.
N1 - Funding Information:
The technical contributions of John Hughes are gratefully acknowledged. This work was supported by NSF Grant CDR 85-22666 and JSEP Grant NOOO14-C-0149.
PY - 1989/5
Y1 - 1989/5
N2 - InAℓAs/InGaAs/InP MODFETS with gate lengths varying from 0.15 μm to 0.34 μm have been fabricated and characterized. Extrinsic transconductance as high as 545 mS/mm has been obtained with very good pinch-off characteristics. A unity current gain cut-off frequency fT of 112 GHz was obtained for 0.15 μm gate-length devices with fT decreasing as gate length increases. This high performance shows that InAℓAs/InGaAs/InP material system will be useful for millimeter wave analog and digital devices.
AB - InAℓAs/InGaAs/InP MODFETS with gate lengths varying from 0.15 μm to 0.34 μm have been fabricated and characterized. Extrinsic transconductance as high as 545 mS/mm has been obtained with very good pinch-off characteristics. A unity current gain cut-off frequency fT of 112 GHz was obtained for 0.15 μm gate-length devices with fT decreasing as gate length increases. This high performance shows that InAℓAs/InGaAs/InP material system will be useful for millimeter wave analog and digital devices.
UR - http://www.scopus.com/inward/record.url?scp=0024662512&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0024662512&partnerID=8YFLogxK
U2 - 10.1016/0167-9317(89)90075-0
DO - 10.1016/0167-9317(89)90075-0
M3 - Article
AN - SCOPUS:0024662512
SN - 0167-9317
VL - 9
SP - 345
EP - 348
JO - Microelectronic Engineering
JF - Microelectronic Engineering
IS - 1-4
ER -