Fabrication and investigation of photosensitive MoOx/n-CdTe heterojunctions

M. M. Solovan, N. M. Gavaleshko, V. V. Brus, A. I. Mostovyi, P. D. Maryanchuk, E. Tresso

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The obtained heterojunctions possessed sharply defined rectifying properties with the rectification ration RR ∼ 106. The temperature dependences of the height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases. The analysis of capacitance-voltage (C-V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance.

Original languageEnglish
Article number105006
JournalSemiconductor Science and Technology
Volume31
Issue number10
DOIs
Publication statusPublished - Sep 1 2016
Externally publishedYes

Keywords

  • CdTe
  • current transport
  • heterojunction
  • MoO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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