Fabrication and properties of p-n-junctions based on Cd1-x Znx Te

Viktor Brus, Mariya Ilashchuk, Bohdan Griytsyk, Orest Parfenyuk, Pavlo Maryanchuk

Research output: Contribution to journalArticlepeer-review

Abstract

Electrical properties of semiconductor p-n-junctions, fabricated by the illumination of Cd1-x Znx Te crystals by powerful laser pulses, were investigated. The fabrication of barrier structures was carried out on the base of Cd1-xZnx single crystals with n-type of conductivity, grown by the Bridgman method at controllable cadmium vapor pressure. The region with p-type of conductivity was created by means of a powerful ruby laser (λ=0.694 μm, absorption coefficient in CdTe α= 6·104 cm-1). The prepared structures were established to be abrupt p-n-junctions. Their I-V characteristics are determined by the generation-recombination processes within the space charge region as well as by the recombination at the interface between recrystallized layer and bulk semiconductor. The C-V characteristics, measured at different frequencies of small amplitude (10 mV) AC signal, provide evidence on the presence of the series resistance and surface states at the interface between recrystallized layer and bulk semiconductor that is in good correlation with the results obtained from the I-V characteristics.

Original languageEnglish
Pages (from-to)107-109
Number of pages3
JournalEastern-European Journal of Enterprise Technologies
Volume6
Issue number12
DOIs
Publication statusPublished - 2013

Keywords

  • CdTe
  • Current
  • Diffusion
  • Evaporation
  • Illumination
  • Laser
  • P-n-junctions
  • Recombination
  • Signal
  • Vacancies

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Energy Engineering and Power Technology
  • Mechanical Engineering
  • Computer Science Applications
  • Industrial and Manufacturing Engineering
  • Management of Technology and Innovation
  • Electrical and Electronic Engineering
  • Applied Mathematics

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