Fabrication and properties of the photosensitive anisotype n-CdxZn1-xO/p-CdTe heterojunctions

V. V. Khomyak, V. V. Brus, M. I. Ilashchuk, I. G. Orletsky, I. I. Shtepliuk, G. V. Lashkarev

Research output: Contribution to journalArticlepeer-review

Abstract

We have fabricated photosensitive anisotype n-Cdx Zn1-x O/p-CdTe heterojunctions by a deposition of Cd0:5 Zn0:5 O -lm onto freshly-cleaved CdTe monocrystalline wafers using a radiofrequency magnetron reactive sputtering of a zinc-cadmium alloy target. Fundamental electrical properties of the heterojunctions were studied. Dominant mechanisms of a current transport were found. n-Cdx Zn1-x O/p-CdTe heterojunctions were photosensitive and were able to operate both in photovoltaic and photodiode modes.

Original languageEnglish
Pages (from-to)1163-1166
Number of pages4
JournalActa Physica Polonica A
Volume126
Issue number5
DOIs
Publication statusPublished - Nov 1 2014
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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