Fabrication and transport study of finite lateral superlattices

M. Hannan, R. Grundbacher, P. Fay, I. Adesida, R. W. Giannetta, C. J. Wagner, M. R. Melloch

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Transport measurements are reported for a two-dimensional electron gas subject to a finite lateral superlattice potential. Devices are fabricated in high mobility GaAs/AlGaAs heterostructures with modulation periods in the range of 2000-3000 Å and differing numbers of gates. Conductance plateaus are observed at gate voltages where the thermopower is stationary. These features indicate the possible formation of effective one-dimensional conductance channels through the potential landscape formed by the lateral gates. The plateau conductances are much less than the basic quantum unit (2e2/h).

Original languageEnglish
Pages (from-to)2821-2824
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume15
Issue number6
Publication statusPublished - Nov 1997
Externally publishedYes

Fingerprint

Two dimensional electron gas
Thermoelectric power
Superlattices
superlattices
Heterojunctions
Modulation
Fabrication
fabrication
plateaus
Electric potential
aluminum gallium arsenides
electron gas
modulation
electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

Cite this

Hannan, M., Grundbacher, R., Fay, P., Adesida, I., Giannetta, R. W., Wagner, C. J., & Melloch, M. R. (1997). Fabrication and transport study of finite lateral superlattices. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 15(6), 2821-2824.

Fabrication and transport study of finite lateral superlattices. / Hannan, M.; Grundbacher, R.; Fay, P.; Adesida, I.; Giannetta, R. W.; Wagner, C. J.; Melloch, M. R.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 6, 11.1997, p. 2821-2824.

Research output: Contribution to journalArticle

Hannan, M, Grundbacher, R, Fay, P, Adesida, I, Giannetta, RW, Wagner, CJ & Melloch, MR 1997, 'Fabrication and transport study of finite lateral superlattices', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 15, no. 6, pp. 2821-2824.
Hannan, M. ; Grundbacher, R. ; Fay, P. ; Adesida, I. ; Giannetta, R. W. ; Wagner, C. J. ; Melloch, M. R. / Fabrication and transport study of finite lateral superlattices. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1997 ; Vol. 15, No. 6. pp. 2821-2824.
@article{0109f4e61329421cb5c70761b3ae93ea,
title = "Fabrication and transport study of finite lateral superlattices",
abstract = "Transport measurements are reported for a two-dimensional electron gas subject to a finite lateral superlattice potential. Devices are fabricated in high mobility GaAs/AlGaAs heterostructures with modulation periods in the range of 2000-3000 {\AA} and differing numbers of gates. Conductance plateaus are observed at gate voltages where the thermopower is stationary. These features indicate the possible formation of effective one-dimensional conductance channels through the potential landscape formed by the lateral gates. The plateau conductances are much less than the basic quantum unit (2e2/h).",
author = "M. Hannan and R. Grundbacher and P. Fay and I. Adesida and Giannetta, {R. W.} and Wagner, {C. J.} and Melloch, {M. R.}",
year = "1997",
month = "11",
language = "English",
volume = "15",
pages = "2821--2824",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Fabrication and transport study of finite lateral superlattices

AU - Hannan, M.

AU - Grundbacher, R.

AU - Fay, P.

AU - Adesida, I.

AU - Giannetta, R. W.

AU - Wagner, C. J.

AU - Melloch, M. R.

PY - 1997/11

Y1 - 1997/11

N2 - Transport measurements are reported for a two-dimensional electron gas subject to a finite lateral superlattice potential. Devices are fabricated in high mobility GaAs/AlGaAs heterostructures with modulation periods in the range of 2000-3000 Å and differing numbers of gates. Conductance plateaus are observed at gate voltages where the thermopower is stationary. These features indicate the possible formation of effective one-dimensional conductance channels through the potential landscape formed by the lateral gates. The plateau conductances are much less than the basic quantum unit (2e2/h).

AB - Transport measurements are reported for a two-dimensional electron gas subject to a finite lateral superlattice potential. Devices are fabricated in high mobility GaAs/AlGaAs heterostructures with modulation periods in the range of 2000-3000 Å and differing numbers of gates. Conductance plateaus are observed at gate voltages where the thermopower is stationary. These features indicate the possible formation of effective one-dimensional conductance channels through the potential landscape formed by the lateral gates. The plateau conductances are much less than the basic quantum unit (2e2/h).

UR - http://www.scopus.com/inward/record.url?scp=4143059286&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4143059286&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:4143059286

VL - 15

SP - 2821

EP - 2824

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 6

ER -