Vertically aligned copper indium diselenide nanorod arrays were synthesized by electrodeposition using porous anodic alumina template supported on a tungsten/silicon substrate. Porous anodic alumina template was fabricated by anodizing aluminium film which was sputtered onto tungsten/silicon substrate. The approach employed a selective chemical etching to penetrate the barrier layer at the bottom of alumina pore before electrodeposition. It enables direct electrical and chemical contact with the underside substrate electrode. The as-deposited sample was annealed at 450 °C in vacuum. High resolution transmission electron microscopy and x-ray diffraction showed high purity CuInSe2 nanorods with a preferred  orientation. Scanning electron microscopy revealed that the nanorods were dense and compact with diameter about 100 nm and with length approximate 1000 nm. Energy-dispersived X-ray spectroscopy showed fabrication of nearly close to stoichiometric CuInSe2. The energy band gap of this nonorod arrays was analysed by fundamental absorption spectrum and evaluated to be 1.06 eV.