Abstract
Vertically aligned copper indium diselenide nanorod arrays were synthesized by electrodeposition using porous anodic alumina template supported on a tungsten/silicon substrate. Porous anodic alumina template was fabricated by anodizing aluminium film which was sputtered onto tungsten/silicon substrate. The approach employed a selective chemical etching to penetrate the barrier layer at the bottom of alumina pore before electrodeposition. It enables direct electrical and chemical contact with the underside substrate electrode. The as-deposited sample was annealed at 450 °C in vacuum. High resolution transmission electron microscopy and x-ray diffraction showed high purity CuInSe2 nanorods with a preferred [112] orientation. Scanning electron microscopy revealed that the nanorods were dense and compact with diameter about 100 nm and with length approximate 1000 nm. Energy-dispersived X-ray spectroscopy showed fabrication of nearly close to stoichiometric CuInSe2. The energy band gap of this nonorod arrays was analysed by fundamental absorption spectrum and evaluated to be 1.06 eV.
| Original language | English |
|---|---|
| Title of host publication | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
| Pages | 118-119 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - May 5 2010 |
| Externally published | Yes |
| Event | 2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: Jan 3 2010 → Jan 8 2010 |
Conference
| Conference | 2010 3rd International Nanoelectronics Conference, INEC 2010 |
|---|---|
| Country | China |
| City | Hongkong |
| Period | 1/3/10 → 1/8/10 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Fabrication of integrated copper indium diselenide nanorod arrays on silicon using porous anodic alumina as template. / Zhang, Zhongwei; Liu, Weifeng; Li, Ji; Han, Yunxin; Jiang, Guoshun; Surya, Charles; Zhu, Changfei.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 118-119 5424567.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fabrication of integrated copper indium diselenide nanorod arrays on silicon using porous anodic alumina as template
AU - Zhang, Zhongwei
AU - Liu, Weifeng
AU - Li, Ji
AU - Han, Yunxin
AU - Jiang, Guoshun
AU - Surya, Charles
AU - Zhu, Changfei
PY - 2010/5/5
Y1 - 2010/5/5
N2 - Vertically aligned copper indium diselenide nanorod arrays were synthesized by electrodeposition using porous anodic alumina template supported on a tungsten/silicon substrate. Porous anodic alumina template was fabricated by anodizing aluminium film which was sputtered onto tungsten/silicon substrate. The approach employed a selective chemical etching to penetrate the barrier layer at the bottom of alumina pore before electrodeposition. It enables direct electrical and chemical contact with the underside substrate electrode. The as-deposited sample was annealed at 450 °C in vacuum. High resolution transmission electron microscopy and x-ray diffraction showed high purity CuInSe2 nanorods with a preferred [112] orientation. Scanning electron microscopy revealed that the nanorods were dense and compact with diameter about 100 nm and with length approximate 1000 nm. Energy-dispersived X-ray spectroscopy showed fabrication of nearly close to stoichiometric CuInSe2. The energy band gap of this nonorod arrays was analysed by fundamental absorption spectrum and evaluated to be 1.06 eV.
AB - Vertically aligned copper indium diselenide nanorod arrays were synthesized by electrodeposition using porous anodic alumina template supported on a tungsten/silicon substrate. Porous anodic alumina template was fabricated by anodizing aluminium film which was sputtered onto tungsten/silicon substrate. The approach employed a selective chemical etching to penetrate the barrier layer at the bottom of alumina pore before electrodeposition. It enables direct electrical and chemical contact with the underside substrate electrode. The as-deposited sample was annealed at 450 °C in vacuum. High resolution transmission electron microscopy and x-ray diffraction showed high purity CuInSe2 nanorods with a preferred [112] orientation. Scanning electron microscopy revealed that the nanorods were dense and compact with diameter about 100 nm and with length approximate 1000 nm. Energy-dispersived X-ray spectroscopy showed fabrication of nearly close to stoichiometric CuInSe2. The energy band gap of this nonorod arrays was analysed by fundamental absorption spectrum and evaluated to be 1.06 eV.
UR - http://www.scopus.com/inward/record.url?scp=77951660943&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951660943&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424567
DO - 10.1109/INEC.2010.5424567
M3 - Conference contribution
SN - 9781424435449
SP - 118
EP - 119
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
ER -