Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6: C4F8 and self-limiting thermal oxidation on Si substrate

Si Young Park, Sandro J. Di Giacomo, R. Anisha, Paul R. Berger, Phillip E. Thompson, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Si-based nanowires with high aspect ratios have been fabricated using an inductively coupled plasma reactive ion etching (ICP-RIE) with a continuous processing gas mixture of fluorine-based SF6: C4F 8 combined with a thermal oxidation technique. The subsequent thermal oxidation further reduced the nanowire diameter utilizing the self-limiting oxidation effect below the lithographic dimensions. Transmission electron microscopy analysis of the completed nanostructures revealed the total oxide thickness and the consumption of the Si core which determines the inner nanowire diameter. The final dimensions of the inner Si nanowire are about 600 nm tall and less than 25 nm wide using top-down processing techniques.

Original languageEnglish
Pages (from-to)763-768
Number of pages6
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume28
Issue number4
DOIs
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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