Field-plated 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 9.1 W/mm at 18 GHz

V. Kumar, G. Chen, S. Guo, B. Peres, I. Eliasevich, I. Adesida

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

MOCVD-grown field-plated 0.25 um gate-length AlGaN/GaN high electron mobility transistors (HEMTs) have been fabricated on 6H-SiC substrates. The devices exhibited maximum drain current density as high as 1.42 A/mm, peak extrinsic transconductance of 437 mS/mm, unity current gain cutoff frequency (fT) of 41 GHz, and maximum frequency of oscillation (f max) of 63 GHz. At 18 GHz, a continuous-wave output power density of 9.1 W/mm with power-added-efficiency (PAE) of 23.7% was obtained, yielding the highest reported power performance of AlGaN/GaN HEMTs at 18 GHz.

Original languageEnglish
Pages (from-to)1080-1081
Number of pages2
JournalElectronics Letters
Volume41
Issue number19
DOIs
Publication statusPublished - Sep 15 2005
Externally publishedYes

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High electron mobility transistors
Drain current
Metallorganic chemical vapor deposition
Cutoff frequency
Transconductance
Current density
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Field-plated 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 9.1 W/mm at 18 GHz. / Kumar, V.; Chen, G.; Guo, S.; Peres, B.; Eliasevich, I.; Adesida, I.

In: Electronics Letters, Vol. 41, No. 19, 15.09.2005, p. 1080-1081.

Research output: Contribution to journalArticle

Kumar, V. ; Chen, G. ; Guo, S. ; Peres, B. ; Eliasevich, I. ; Adesida, I. / Field-plated 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 9.1 W/mm at 18 GHz. In: Electronics Letters. 2005 ; Vol. 41, No. 19. pp. 1080-1081.
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