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Field-plated 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 9.1 W/mm at 18 GHz
V. Kumar, G. Chen, S. Guo, B. Peres, I. Eliasevich, I. Adesida
Research output: Contribution to journal › Article › peer-review
5
Citations
(Scopus)